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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 28 (1995), S. 2738-2744 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 4616-4618 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new nucleation method, which is different from bias-enhanced nucleation, was employed for the preparation of (001)-oriented diamond films on untreated, mirror-polished silicon substrates. The nucleation was realized in an electron cyclotron resonance enhanced microwave plasma at a pressure of about 10−3 Torr which was 4 orders of magnitude lower than that normally used for bias-enhanced nucleation (∼tens Torr). Scanning electron microscopy and Raman spectroscopy were used to investigate the surface morphology and phase purity of the deposited diamond films. The new findings may provide us a route to further understand the nucleation mechanism of diamond films by chemical vapor deposition. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2024-2027 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: B3LYP and CCSD(T) (single-point) calculations are performed on structures and interconversion transition states for five C2N2 isomers, i.e., the linear structures NCCN 1, CNCN 2, CNNC 3, and CCNN 4, and the NNC three-membered ring structure with exocyclic C–C bonding 5. A schematic potential-energy surface of the five C2N2 isomers is established. It is shown that the elusive and long searched for isomer 3 lies in a deep potential well against isomerization to the well-studied isomers 1 and 2, while the two transition states, which have been predicted to connect the isomers 1 and 3, are actually associated with the interexchange of the two cyano groups in isomer 2. It is also shown that the experimentally unknown but expectedly important isomer 4 may take an isomerization pathway to the isomer 1 via the intermediate 5, and the isomer 4 also lies in a deep potential well. Both the isomers 3 and 4 may be thermally as stable as the isomer 2. The results presented in this paper may provide useful information for the identification of the two isomers 3 and 4. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5534-5536 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of naturally layered intermetallic compound SmMn2Si2 with textured structure have been studied. There exist a ferromagnetic transition at 35 K and two antiferromagnetic transitions at 120 and 230 K. The antiferromagnetic state below 230 K exhibits different magnetoresistance, with a negative magnetoresistance of 3%–4% for current I applied perpendicular to the c axis and with a positive magnetoresistance effect of about 4%–6% for current I parallel to the c axis. The observed magnetoresistance is likely to be related to magnetovolume effects. In the ferromagnetic state, a positive magnetoresistance with a maximum increase of 22% under an applied field of 5 T is observed at 4 K, and both H ⊥ I and H (parallel) I configurations show positive magnetoresistance. © 1997 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 1177-1191 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: By means of symplectic group Sp(2M), the symplectic symmetry of the Hubbard model and the η pairing are investigated to approach the eigenstates which have the largest spin multiplicities. The behavior of the off-diagonal long-range order of these eigenstates is examined by the criterion proposed by Yang and the energy diagram of the corresponding eigenvalues is elucidated by the η pairing mechanism. A basis set which is expressible in terms of η and ηa pairings is proposed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2418-2420 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optically pumped multiple-quantum-well laser of InGaN–GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm2 is measured in a 400-μm-long cavity at 150 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 514-516 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1666-1668 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of diamondlike carbon (DLC) films coated by pulsed laser deposition technique on the electron emission characteristics of Mo tips is examined. Turn-on voltage (V0) was lowered from 40 V for Mo tips to 22 V for DLC coated Mo tips and maximum anode current (IA) was increased from ∼44 μA for Mo tips to ∼2.0 mA for DLC coated Mo tips. Maximum anode current (IA) for the DLC coated Mo tips, however, decreased during operation. Raman spectroscopy and selected area diffraction (SAD) in transmission electron microscopy (TEM) revealed that the degradation of electron emission behavior can be ascribed to the conversion of sp3-bonds, characteristic for diamond, to sp2-bonds, characteristics for graphite. The transformation of the structure is assumed to be induced by the local heat from the DLC coatings. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1543-1545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved radiative recombination measurements on GaSb quantum dots have been performed. The GaSb quantum dots are grown by molecular beam epitaxy on (100) GaAs through a self-assembly process. Time-resolved measurements show that, after a rapid hole capture process, the photoluminescence decays with a fast and a slow component. The fast component is shortened significantly with higher excitation intensity while the slow component is roughly constant. The radiative lifetimes are much longer than the lifetimes of ordinary GaSb quantum wells with a straddling band lineup. These results support a staggered band lineup and space charge induced band-bending model. © 1996 American Institute of Physics.
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