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  • 1995-1999  (62)
  • 1
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    Environmental health: nickel-and-diming it (1998)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1998-12-29
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Weiss, B -- New York, N.Y. -- Science. 1998 Nov 27;282(5394):1644.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9867663" target="_blank"〉PubMed〈/a〉
    Keywords: *Environmental Health ; Environmental Pollutants/*adverse effects ; Humans ; Intelligence/drug effects ; Mental Processes/*drug effects
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Dioxin and advisory board (1995)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1995-09-01
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Clapp, R -- Ozonoff, D -- Silverstone, A -- Weiss, B -- New York, N.Y. -- Science. 1995 Sep 1;269(5228):1204-5.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7652563" target="_blank"〉PubMed〈/a〉
    Keywords: Dioxins/*adverse effects ; Humans ; United States ; *United States Environmental Protection Agency
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Interaction of Ni90Ti10 alloy thin film with 6H-SiC single crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 167-173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions, phase formation, microstructure, and composition, as functions of heat treatments (400–800 °C) were investigated in Ni90Ti10 alloy thin film coevaporated on an n-type 6H-SiC (0001) single-crystal substrate. The study was carried out with the aid of Auger electron spectroscopy, x-ray diffraction, and analytical transmission electron microscopy. The interaction was found to begin at 450 °C. Ni and C are the dominant diffusing species. The reaction zone is divided into three layers. In the first layer, adjacent to the SiC substrate, the presence of Ni-rich silicide, Ni2Si, and C precipitates, was observed. The second layer is composed mainly of TiC, while the third consists of Ni2Si. This composite structure, consisting of the silicide as a low resistivity ohmic contact, and of the carbide as a diffusion barrier, promises high-temperature stability crucial to ohmic contact development for SiC technology. Factors controlling phase formation in the Ni–Ti/SiC system are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362801
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 338-340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120729
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  • 5
    Electronic Resource
    Electronic Resource
    Characteristics of surface acoustic wave propagation in III-V semiconductor quantum well structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5002-5007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of surface acoustic waves (SAWs) in AlGaAs/GaAs and InGaAs/InP quantum well structures is modeled using a Laguerre polynomial approach to determine the effects of the quantum well parameters (layer thickness, layer composition, and number of layers) on the induced potential, electric field, particle displacement, and strain. These characteristics show that variations of the electric field within regions of the structure of interest for device applications can be brought about, and are of use for the design of devices based on SAW interactions in quantum well structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359726
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis of phase shifts due to etching in photoreflectance spectra of a GaAs/AlGaAs single-quantum well structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2672-2678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoreflectance measurements of a GaAs/Al0.2Ga0.8As single-quantum well structure showed well defined Franz–Keldysh oscillations in the neighborhood of the GaAs and Al0.2Ga0.8As band-edge energies. That experiment investigated the origin of the Franz–Keldysh oscillations by sequential etching and photoreflectance analysis of the grown layers and showed that the phase of the Franz–Keldysh oscillations shifted as the upper Al0.2Ga0.8As barrier was etched, with eventual phase reversal when roughly half of the upper barrier was removed. Here, these phase shifts are determined accurately using a novel Kramers–Kronig approach and they are interpreted in terms of optical interference effects using both a simple two-ray model and a multiple-reflection treatment incorporating a calculation of the Seraphin coefficients. The results also enable the thickness of the layers removed to be determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358734
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  • 7
    Electronic Resource
    Electronic Resource
    Analysis of Franz–Keldysh oscillations in photoreflectance spectra of a AlGaAs/GaAs single-quantum well structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6472-6480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results are presented for the physical origins of room-temperature photoreflectance features of a AlGaAs/GaAs single-quantum well structure. The spectra exhibit well-defined Franz–Keldysh oscillations which overlap with photoreflectance features due to the quantum well and complicate the determination of the energies of the transitions within the quantum well. The origin of the Franz–Keldysh oscillations are determined using wet chemical etching to selectively remove grown layers down to the substrate. The resulting spectra are presented as a function of etch depth which allows the magnitude of the built-in electric fields to be determined and reveals the location within the quantum well structure where the Franz–Keldysh oscillations originate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359122
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  • 8
    Electronic Resource
    Electronic Resource
    Interaction between Ni90Ti10 alloy thin film and Si single crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1179-1181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Well defined phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni silicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362669
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2254-2257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of the modal propagation loss of planar SiGe/Si heterojunction waveguides with Ge concentrations ranging from 1.3% to 10% has been determined for both TE and TM polarizations at wavelengths of 1.15 and 1.523 μm. The results show that at 1.15 μm wavelength the propagation loss increases with increasing Ge concentration due to the band-edge absorption, which dominates the waveguide loss characteristics, while at the wavelength of 1.523 μm it decreases with increasing Ge concentration. The polarization sensitivity is only found at the longer wavelength and is thought to be due to the interaction of the evanescent field at the SiGe/Si interface with the Si substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359573
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  • 10
    Electronic Resource
    Electronic Resource
    Photosensitivity of proton implanted germania-doped planar silica structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1207-1210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented which demonstrate that an absorption peak at a wavelength of 240 nm is produced in germania-doped planar silica structures by the implantation of a dose of 1×1017 cm−2 300 keV protons into a sample heated to 800 °C. This proton implantation induced absorption was found to saturate for a total implanted dose of 1×1017 protons cm−2 and the effect did not increase when multiple energy implants with a dose of 1×1017 protons cm−2 were used. The 240 nm absorption peak was partially removed by exposure to 0.5 J, 10 ns, 249 nm laser pulses for 7 min using a pulse repetition frequency of 50 Hz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358987
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