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Effect of deep levels on current excitation in 6H-SiC diodes (1997)

Kuznetsov, N. I. ; Edmond, J. A.

Springer

Semiconductors 31 (1997), S. 1049-1052

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ISSN: 1063-7826

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract The results of an experimental study of deep levels in the p-base of 6H-SiC diodes are presented. A deep level of unknown origin, with ionization energy E c -1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes. A level with ionization energy E c -0.16 eV is attributed to a nitrogen donor impurity. Electron capture and thermal activation processes associated with this level substantially extend the duration of current relaxation in the p-n junction.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1187023

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