Abstract
The results of an experimental study of deep levels in the p-base of 6H-SiC diodes are presented. A deep level of unknown origin, with ionization energy E c -1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes. A level with ionization energy E c -0.16 eV is attributed to a nitrogen donor impurity. Electron capture and thermal activation processes associated with this level substantially extend the duration of current relaxation in the p-n junction.
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F. M. Berkovskii, S. M. Ryvkin, and N. B. Strokan, Fiz. Tekh. Poluprovodn. 3, 230 (1961) [sic].
F. M. Berkovskii, S. M. Ryvkin, and N. B. Strokan, Fiz. Tekh. Poluprovodn. 3, 3535 (1961) [sic].
M. M. Anikin, A. S. Zubrilov, A. A. Lebedev, A. M. Strel’chuk, and V. E. Chelnokov, F. M. Berkovskii, S. M. Ryvkin, and N. B. Strokan, Fiz. Tekh. Poluprovodn. 25, 479 (1991) [Sov. Phys. Semicond. 25, 289 (1991)].
N. T. Son, E. Sorman, W. M. Chen, O. Kordina, B. Monemar, and E. Janzen, Appl. Phys. Lett. 65, 2687 (1994).
St. G. Muller, D. Hoffmann, A. Winnacker, E. N. Mokhov, and Yu. A. Vodakov, Inst. Phys. Conf. Ser. 142, 361 (1996).
G. F. Goluyanov, Fiz. Tekh. Poluprovodn. 4, 3170 (1993) [Semiconductors 27, 925 (1993)].
A. I. Veinger and K. P. Fiz. Tekh. Poluprovodn. 2, 294 (1968) [Sov. Phys. Semicond. 2, 247 (1968)].
G. Borda, E. E. Violin, G. N. Violina, and Yu. M. Tairov, Fiz. Tekh. Poluprovodn. 11, 2551 (1969) [sic].
H. S. Kong, J. T. Glass, R. F. Glass, and R. F. Davis, J. Appl. Phys. 64, 2672 (1988).
J. W. Palmour, R. F. Davis, T. M. Wallett, and K. B. Bhasin, J. Vac. Sci. Technol. A 4, 590 (1990).
T. Tachibana, H. S. Kong, Y. C. Wang, and R. F. Davis, J. Appl. Phys. 67, 6375 (1990).
D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
N. I. Kuznetsov, Fiz. Tekh. Poluprovodn. 27, 1674 (1993) [Semiconductors 27, 925 (1993)].
W. Suttrop, G. Pensl, W. J. Chyke, R. Stein. S. Leibenzeder, J. Appl. Phys. 72, 3708 (1992).
H. J. van Daal, W. F. Knippenbery, J. D. Wasscher, J. Phys. Chem. Solids 24, 109 (1963).
M. Ikeda, H. Matsunami, and T. Tanaka, Phys. Rev. B 22, 2842 (1980).
N. I. Kuznetsov, A. P. Dmitriev, and A. S. Furman, Fiz. Tekh. Poluprovodn. 28, 1010 (1994) [Semiconductors 28, 584 (1994)].
V. N. Abakumov, V. I. Perel’, I. N. Yassievich, Fiz. Tekh. Poluprovodn. 12, 3 (1978) [Sov. Phys. Semicond. 12, 1 (1978)].
O. V. Vakulenko and O. A. Guseva, Fiz. Tekh. Poluprovodn. 15, 1528 (1981) [Sov. Phys. Semicond. 15, 886 (1981)].
C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957).
V. V. Evstropov, K. V. Kiselev, I. L. Petrovich, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn. 18, 1852 (1984) [Sov. Phys. Semicond. 18, 1156 (1984)].
Yu. R. Nosov, Physical Principles of the Semiconductor Diode Operating in the Pulse Mode, Nauka, 1968.
S. M. Sze, Physics of Semiconductor Devices, Wiley, N.Y. (1981).
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Fiz. Tekh. Poluprovodn. 31, 1220–1224 (October 1997)
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Kuznetsov, N.I., Edmond, J.A. Effect of deep levels on current excitation in 6H-SiC diodes. Semiconductors 31, 1049–1052 (1997). https://doi.org/10.1134/1.1187023
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DOI: https://doi.org/10.1134/1.1187023