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  • 1
    Electronic Resource
    Electronic Resource
    Melting of horizontal ice layer from above by combined effect of temperature and concentration of aqua-solvent (1987)
    Springer
    Heat and mass transfer 21 (1987), S. 227-232 
    Details
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Description / Table of Contents: Zusammenfassung Der Aufsatz behandelt das Aufschmelzen einer horizontalen Eisschicht von oben mittels einer wäßrigen Lösung niedrigen Gefrierpunktes. Die in diesem Experiment verwendeten Lösungen sind Natriumchlorid NaCl, Kalziumchlorid CaCl2, Magnesiumchlorid MgCl2 und Harnsäure CO(NH2)2. Die Oberfläche der wäßrigen Lösung und der Schmelze wurde mit einer Infrarotlampe beheizt, deren Temperatur bei 8–40
    Notes: Abstract This paper is concerned with the melting of horizontal ice layer from above by aqua-solvent with low solidification point. The solute used in this experiment are Sodium chloride NaCl, Calcium chloride CaCl2, Magnesium chloride MgCl2, and Urea CO(NH2)2- The upper surface of aqua-solvent melt layer is heated by an infrared lamp, whose temperature is in the range of about 8
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01004025
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  • 2
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 3
    Electronic Resource
    Electronic Resource
    Frequency characteristics of the Mn-doped InP p-n junction (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1961-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy is applied to the analysis of the thermal properties of the Mn acceptor-doped InP grown by liquid-phase epitaxy. The thermal activation energy and capture cross section are determined as ΔET=183 meV and σp=1.8×10−13 cm2, respectively. The cutoff frequency of the emission of holes from the Mn acceptor is 1 GHz at 300 K. It is shown that the small signal frequency characteristic of a buried heterostructure laser is improved at frequencies f〉1 GHz by using the Mn-doped p-InP layer for the current blocking region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341094
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  • 4
    Electronic Resource
    Electronic Resource
    Fe-doped semi-insulating InP grown by chloride vapor-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4698-4700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating (SI) InP layers have been grown using chloride vapor-phase epitaxy for the first time. Fe-doping was carried out by introducing FeCl2 to the growth region, bypassing the source region. The FeCl2 was formed by etching a pure metallic Fe source by HCl vapor. The resistivity of the SI-InP epitaxial layers was evaluated by measuring current-voltage characteristics, and a high value of 4×108 Ω cm was obtained. The semi-insulating current blocking was maintained up to an applied voltage of nearly 30 V, even at 110 °C, with a layer 4.3 μm thick.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338385
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  • 5
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99861
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  • 6
    Electronic Resource
    Electronic Resource
    Evaluation of exciton absorption peak broadening factors in InGaAsP/InP multiple quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2290-2292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW's) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100256
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  • 7
    Electronic Resource
    Electronic Resource
    Exact determination of superlattice structures by small-angle x-ray diffraction method (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of In1−xGaxAsyP1−y/InP superlattices (x=0.27 and y=0.60) is investigated by small-angle x-ray diffraction method. The interference peaks due to the superlattice structure were clearly observed up to the 6th order. The period of the superlattice was determined from the angular positions of the peaks using the modified Bragg's law. By analyzing the diffraction patterns of the first and the secondary peaks according to the optical multilayer theory, the thickness of each component (In1−xGaxAsyP1−y and InP) was uniquely determined within an error of ±1 A(ring). This method can be used to determine any type of superlattice structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99342
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of spin-orbit split-off band on optical gain in AlGaInP/GaInP strained quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 466-468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical gains in AlGaInP/GaInP strained quantum wells using valence band structures by the second-order k⋅p method, with and without spin-orbit split-off (SO) band effect have been calculated. It was easy to overestimate the optical gain without considering the SO-band effect, because a small spin-orbit splitting energy for GaInP makes higher nonparabolicity of the valence bands. The SO-band effect is particularly significant under tensile strain, since the SO band makes the effective mass very large due to the large interaction between the SO and light hole bands. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114058
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  • 9
    Electronic Resource
    Electronic Resource
    Design study of a free-electron laser on a storage ring at Tohoku University (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 354-356 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A free-electron laser (FEL) based on the proposed Tohoku Light Source storage ring is discussed. In the first stage the FEL is made to operate in the visible region with a relative low beam energy to avoid the complication of mirrors. Then, with a higher beam energy, the FEL can produce radiation of wavelengths in the UV or VUV region. Some simulation results of the storage-ring FEL with wavelengths of ∼200 nm are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S090904959701827X
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  • 10
    Electronic Resource
    Electronic Resource
    Lifetime measurement of the ((11/2)−) isomer in 125Cs (1998)
    Springer
    The European physical journal 2 (1998), S. 237-239 
    Details
    ISSN: 1434-601X
    Keywords: PACS:21.10.Tg Lifetimes – 23.20.Js Multipole matrix elements – 27.60.+j 90 ≤ A ≤ 149
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The lifetime of the ((11/2)−) state at 267keV in 125Cs was measured. A Ge detector with the transistor reset preamplifier(TRP Ge) was used to measure delayed γ-rays under an intense prompt background. The B(M2) value deduced from the lifetime was found to be consistent with the Weisskopf estimate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100500050113
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