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  • 1995-1999  (34)
  • 1985-1989  (38)
  • 1980-1984  (16)
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  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 742-744 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structure of In1−xGaxAsyP1−y/InP superlattices (x=0.27 and y=0.60) is investigated by small-angle x-ray diffraction method. The interference peaks due to the superlattice structure were clearly observed up to the 6th order. The period of the superlattice was determined from the angular positions of the peaks using the modified Bragg's law. By analyzing the diffraction patterns of the first and the secondary peaks according to the optical multilayer theory, the thickness of each component (In1−xGaxAsyP1−y and InP) was uniquely determined within an error of ±1 A(ring). This method can be used to determine any type of superlattice structure.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2290-2292 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW's) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1961-1963 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Admittance spectroscopy is applied to the analysis of the thermal properties of the Mn acceptor-doped InP grown by liquid-phase epitaxy. The thermal activation energy and capture cross section are determined as ΔET=183 meV and σp=1.8×10−13 cm2, respectively. The cutoff frequency of the emission of holes from the Mn acceptor is 1 GHz at 300 K. It is shown that the small signal frequency characteristic of a buried heterostructure laser is improved at frequencies f〉1 GHz by using the Mn-doped p-InP layer for the current blocking region.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4698-4700 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fe-doped semi-insulating (SI) InP layers have been grown using chloride vapor-phase epitaxy for the first time. Fe-doping was carried out by introducing FeCl2 to the growth region, bypassing the source region. The FeCl2 was formed by etching a pure metallic Fe source by HCl vapor. The resistivity of the SI-InP epitaxial layers was evaluated by measuring current-voltage characteristics, and a high value of 4×108 Ω cm was obtained. The semi-insulating current blocking was maintained up to an applied voltage of nearly 30 V, even at 110 °C, with a layer 4.3 μm thick.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 466-468 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical gains in AlGaInP/GaInP strained quantum wells using valence band structures by the second-order k⋅p method, with and without spin-orbit split-off (SO) band effect have been calculated. It was easy to overestimate the optical gain without considering the SO-band effect, because a small spin-orbit splitting energy for GaInP makes higher nonparabolicity of the valence bands. The SO-band effect is particularly significant under tensile strain, since the SO band makes the effective mass very large due to the large interaction between the SO and light hole bands. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 354-356 
    ISSN: 1600-5775
    Quelle: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Thema: Geologie und Paläontologie , Physik
    Notizen: A free-electron laser (FEL) based on the proposed Tohoku Light Source storage ring is discussed. In the first stage the FEL is made to operate in the visible region with a relative low beam energy to avoid the complication of mirrors. Then, with a higher beam energy, the FEL can produce radiation of wavelengths in the UV or VUV region. Some simulation results of the storage-ring FEL with wavelengths of ∼200 nm are presented.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Springer
    The European physical journal 2 (1998), S. 237-239 
    ISSN: 1434-601X
    Schlagwort(e): PACS:21.10.Tg Lifetimes – 23.20.Js Multipole matrix elements – 27.60.+j 90 ≤ A ≤ 149
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract: The lifetime of the ((11/2)−) state at 267keV in 125Cs was measured. A Ge detector with the transistor reset preamplifier(TRP Ge) was used to measure delayed γ-rays under an intense prompt background. The B(M2) value deduced from the lifetime was found to be consistent with the Weisskopf estimate.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Springer
    Heat and mass transfer 20 (1986), S. 133-139 
    ISSN: 1432-1181
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Beschreibung / Inhaltsverzeichnis: Zusammenfassung Der Aufsatz behandelt das Schmelzen einer Schneeschicht mittels Übersprühen mit einer wäßrigen Kalziumchloridlösung einer Temperatur von 0°C mit dem Ziel, die Einflüsse unterschiedlicher Anfangskonzentrationen der Lösung, verschiedener Sprühmengen und unterschiedlich dichte Packung des Schnees in der Anfangsphase des Aufschmelzens zu untersuchen. Die Schmelzrate im Inneren der Schneeschicht ist groß, verglichen mit der auf der Schneeoberfläche. Im Verlauf der Aufschmelzzeit sinkt die Temperatur der Schneeschicht langsam auf die fest-flüssige Gleichgewichtstemperatur. Dies entspricht der Temperaturabsenkung bei der Erstarrung. Die Temperaturverteilung senkrecht zur Schneeschicht vergleichmäßigt sich bei der Gleichgewichtstemperatur. Deshalb resultiert nach dieser Anfangsperiode die Schmelzmasse hauptsächlich nur aus dem Aufschmelzen an der Oberfläche. Aus diesen Tatsachen kann auf ein Schmelzverhalten in der Anfangsperiode geschlossen werden, das hauptsächlich durch die chemische Reaktion bestimmt ist. Es wird gezeigt, daß die in dem vorgestellten Experiment ermittelten Ergebnisse nützliche, grundlegende Hinweise für die Beschleunigung des Abschmelzens einer Schneeschicht geben können.
    Notizen: Abstract This paper is concerned with the melting of snow layer by showering the Calcium Chloride aqueous solution at the temperature of 0°C to obtain the effects of initial concentration of the solution, showering amount of the solution and density of packed snow sample on melting of snow, in the short period after snow melting being initiated. The rate of internal melting in the snow layer is great compared with that of the surface melting. As melting time passes, the temperature of snow layer gradually decreases to the solid-liquid equilibrium temperature. This phenomenon corresponds to the solidification temperature drop. The temperature distribution in the normal direction in snow layer becomes uniform at the equilibrium temperature. Therefore, after this period the major part of melt amount is surface melting only. From this fact the typical melting behaviour may be mainly induced by the effect of chemical reaction. It is demonstrated that the results obtained in this experiment could give an useful basic information for accelerating the melting of snow layer.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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