ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 117-118 (Jan. 1993), p. 501-506 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1432-0495
    Keywords: Effective porosity ; Specific yield ; Migration ; Tracer test ; Porosity ; Tritium ; Finite element method ; Longitudinal dispersivity ; Sedimentary rock
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract Effective porosity value was analyzed from the tritium concentration of sampled groundwater using a three-dimensional groundwater-flow and advection-dispersion code based on the finite element method. The effective porosity value was about 10%. Porosity values measured from core samples were 7–15%. The groundwater flow velocity estimated from the tritium concentrations was about 1 × 10−5 cm s−1. Therefore, during the low groundwater flow velocity condition, effective porosity and porosity values were the same. At the same test site, a 0.48% effective porosity value, determined by another tracer test injecting Br− solution into the aquifer during groundwater level change, was smaller than the porosity value when the flow velocity was 1.8×10−2 cm s−1. Thus the effective porosity value is concluded to be due to groundwater flow velocity. The specific yield value was calculated to be 0.6% by the total volume of tunnel seepage water and the total volume of the rock unsaturated during tunnel construction. However, as pore water continued to be drained after the groundwater level change was completed, the specific yield value became larger than 0.6%. Thus specific yield value is concluded to be due to drainage time.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Environmental geology 24 (1994), S. 166-175 
    ISSN: 1432-0495
    Keywords: Groundwater ; Isotope ; Tunnel ; 3H ; δD ; δ 18O ; δ 13C ; 36Cl ; NO3 − ; HCO3 − ; CO2
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract The change in groundwater chemistry along the groundwater flow path in the Matsumoto tunnel vicinity was studied, and the origin of the groundwater and dissoluted substances was determined. The relationship between the concentration of HCO3 −, Ca2+, and Na+, and CO2 gas pressure in the groundwater indicated that the HCO3 −, Ca2+, and Na+ were produced by the reaction of the CO2 gas in the groundwater and feldspar in the rocks. The relationship between the concentration of NO3 − and the Eh and pH values in the groundwater indicated that in an oxidative condition, ammonia-oxidizing and nitriteoxidizing bacteria used NH4 + and produced NO3 − and H+, and in a reductive condition, denitrifying bacteria used NO3 − and produced N2 gas and OH−. The stable hydrogen and oxygen isotopic ratio in the groundwater and precipitation indicated that the groundwater originated from precipitation that had fallen on the area. The concentration of3H and the stable hydrogen and oxygen isotopic ratios in the groundwater suggested that it has been getting warmer climatically for more than 60 years. The stable carbon isotopic ratio indicated that the HCO3 − in the groundwater, excluding deep well water, originated from CO2 gas produced by organic matter in the soil. The deep well water, which had a higher concentration of HCO3 − than the other groundwater sampled, was thought to have acquired HCO3 − though contact with rocks. The36Cl/Cl ratio indicated the recharge age of the deep well water sampled at a depth of 760 m at the foot of the plateau was recent.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    ISSN: 1432-0495
    Keywords: Key words Effective porosity ; Specific yield ; Migration ; Tracer test ; Porosity ; Tritium ; Finite element method ; Longitudinal dispersivity ; Sedimentary rock
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract Effective porosity value was analyzed from the tritium concentration of sampled groundwater using a three-dimensional groundwater-flow and advection-dispersion code based on the finite element method. The effective porosity value was about 10%. Porosity values measured from core samples were 7–15%. The groundwater flow velocity estimated from the tritium concentrations was about 1 × 10–5 cm s–1. Therefore, during the low groundwater flow velocity condition, effective porosity and porosity values were the same. At the same test site, a 0.48% effective porosity value, determined by another tracer test injecting Br– solution into the aquifer during groundwater level change, was smaller than the porosity value when the flow velocity was 1.8 × 10–2 cm s–1. Thus the effective porosity value is concluded to be due to groundwater flow velocity. The specific yield value was calculated to be 0.6% by the total volume of tunnel seepage water and the total volume of the rock unsaturated during tunnel construction. However, as pore water continued to be drained after the groundwater level change was completed, the specific yield value became larger than 0.6%. Thus specific yield value is concluded to be due to drainage time.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2951-2957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities Jc were measured in as-deposited, c-axis-oriented Bi2Sr2Ca2Cu3Ox thin films with Tc values as high as 97 K, which were prepared by metalorganic chemical-vapor deposition. These films showed high Jc ((approximately-greater-than)109 A/m2) at 77.3 K in high magnetic fields (≥1 T, H(parallel)a-b plane). The best values are 3.3×109 A/m2 at 1 T and 9.1×108 A/m2 at 8 T, which are the highest Jc for Bi-oxide thin films among those reported so far. There were no signs of weak links in the Jc(H) behavior, and the surface morphology examined by scanning electron microscopy showed no apparent grain boundaries. The values of Jc decreased sharply when the applied field deviated from the a-b plane, and went to zero at the angles where the field component in the c direction is nearly equal to the irreversibility field Hc2* parallel to the c axis. The angular dependence of Jc of these films is most reasonably explained by the theory of intrinsic pinning.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1309-1312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was 〈m1;38p〉found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the oxide by 60Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4585-4585 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In various paramagnetic and nearly ferromagnetic substances, the phenomenon of the susceptibility maximum at low temperatures is usually accompanied by the Curie–Weiss susceptibility at higher temperatures; the concurrence of these two features is universally observed in 4d and 5d metals, Laves-phase compounds, and heavy-fermion compounds. No existing theories, however, have been able to explain this concurrence. According to the Fermi-liquid model,1,2 we can express the susceptibility, as a matrix form, exactly in terms of the spin-antisymmetric part of the quasiparticle interaction function gij=gεε' (ε is the quasiparticle energy), χ(T)∝β Ji Jj (j↓(1/1+2βψ)↓i)[ni (1−ni)]1/2[nj(1−nj)]1/2, (1) where ψij=[ni(1−ni)]1/2 gij[nj(1−nj)]1/2, ni is the Fermi distribution function at state i, and β=1/kT. If gij is given, Eq. (1) can be evaluated numerically. We use the g function, which contains logarithmic terms such as (ε−μ)2 ln||ε−μ|| arising from the Fermi-liquid effect (μ is the chemical potential). We find that the calculated result for χ(T) gives a broad maximum at low temperatures because of the logarithmic terms and, at higher temperatures, it follows precisely the Curie–Weiss law, which directly reflects the general form of (1). In conclusion, both the susceptibility maximum and the Curie–Weiss behavior are found to be inherent in any Fermi liquid.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1058-1060 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epilayers were grown on GaAs substrates by gas-source molecular-beam-epitaxy technique using dimethylhydrazine as a nitrogen source. It was found that cubic GaN grows on GaAs (001) surfaces epitaxially, while hexagonal GaN grows on GaAs (111) surfaces, from the analyses of x-ray diffraction and reflection high-energy electron diffraction patterns. Cathodoluminescence measurements suggested that the band-gap energy of cubic GaN is around 0.37 eV larger than that of hexagonal GaN.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 355 (1992), S. 327-328 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The BSCCO system has many superconducting phases with various values of Tc: examples of bulk materials are the high-Tc phase Bi2Sr2Ca2Cu3Ox ('2223') with Tc^ 110 K and the low-Tc phase Bi2Sr2CaCu2Ov ('2212') with TC = 80K. It is difficult, however, to obtain films of the high-Tc phase 2223. ...
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 68 (1999), S. 145-151 
    ISSN: 1432-0630
    Keywords: PACS: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...