ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2720-2727 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The microstructural properties of stoichiometric surface and buried Si3N4 films, fabricated with 15N ion implantation into Si wafers, are studied using the extended x-ray absorption fine structure (EXAFS) and near-edge x-ray absorption fine structure (NEXAFS) spectroscopies. Complementary information about the film composition and structure is provided by nuclear reaction analysis (NRA) and cross-section transmission electron microscopy (XTEM). The films have been characterized in the as-implanted state and after annealing in the temperature range 1100–1200 °C. For all the examined films, the N/Si ratio at the peak of the nitrogen profile, as measured by NRA is 1.33, a value that corresponds to stoichiometric nitrides. However, small compositional deviations towards a N-rich composition are detected by EXAFS in the surface nitrides. The excess nitrogen is also detectable in the NEXAFS spectra, where it introduces a characteristic resonance line superimposed to the absorption edge. Finally, XTEM observations confirm the formation of the nitride layers and reveal different degrees of damage at the Si3N4/Si interface for the low and high energy implantations, respectively. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3215-3217 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The depth distribution of Ge implanted into thermally grown SiO2 films has been studied after annealing using transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction. At annealing temperatures above 900 °C a significant redistribution of the as-implanted Ge profile was found. Crystalline Ge nanoclusters embedded in the SiO2 matrix are formed within a cluster band with well defined boundaries. The evolution of nanoclusters can be explained qualitatively by a model based on nucleation, growth and Ostwald ripening of Ge precipitates. Besides, chemical and interface reactions lead to the formation of additional Ge peaks near the surface and at the Si/SiO2 interface. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 248-249 (May 1997), p. 163-166 
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 59-63 
    ISSN: 1432-1130
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The non-destructive standardless nuclear analysis technique Rutherford Backscattering Spectroscopy (RBS) is used to study interdiffusion phenomena in aluminium and gold layers with a high depth resolution, e.g., at the interfaces. A multilayered system consisting of alternate aluminium and gold layers was deposited under high vacuum conditions on polished glassy carbon and single-crystalline silicon substrates to investigate the interdiffusion of gold and aluminium in as-deposited layers. The characteristic peaks of gold and aluminium are in background-free regions of the RBS spectra if the layers are sufficiently thin and substrates like silicon with a low Z are used. The RBS results indicate that the Au-Al interdiffusion behaviour in as-deposited layers strongly depend on the conditions during deposition in the evaporation chamber.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 483-486 
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract SiCx layers close to the surface have been produced by implanting 40 keV 13C ions into silicon with a fluence of 6 × 1017 at./cm2 (j = 12 μA/cm2) at room temperature (RT). Depth distributions and areal densities (doses) of the implanted carbon have been analysed by the nuclear reaction 13C(p,γ)14N (NRA) which shows a sharp resonance in the excitation function at a proton energy of 1748 keV (G = 75 eV FWHM). The depth resolution at the surface amounts to 31 nm due to energy spread of the proton beam (1.2 keV FWHM) and resonance width. The surface resolution of the NRA can be increased up to 8 nm when tilting the sample (surface normal) to an angle of 75° with respect to the proton beam direction. Using a NaI detector the detection limit of 13C in silicon is approximately 1 at.%. Comparative elastic backscattering measurements with 4He+ projectiles were performed at 2 MeV (Rutherford backscattering spectroscopy, RBS) and 3.45 MeV (high energy backscattering, HEBS) at a backscattering angle of 171°. The measured 13C depth distributions have been compared with a distribution calculated by the Monte Carlo algorithm T-DYN.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The molecular ions O+ 2 and NO+ are im- planted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5×1016 to 3.5×1017 at/cm2. The samples are processed by electron beam rapid thermal annealing at 1100 °C for 15 s. The depth distributions of the implanted specimens (18O) are determined by nuclear reaction analyses using the reaction 18O(p,α)15N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The molecular ions O 2 + and NO+ are implanted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5×1016 to 3.5×1017 at/cm2. The samples are processed by electron beam rapid thermal annealing at 1100 °C for 15 s. The depth distributions of the implanted specimens (18O) are determined by nuclear reaction analyses using the reaction 18O(p,α)15N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 483-486 
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract SiCX layers close to the surface have been produced by implanting 40 keV 13C ions into silicon with a fluence of 6×1017 at./cm2 (j=12 μA/cm2) at room temperature (RT). Depth distributions and areal densities (doses) of the implanted carbon have been analysed by the nuclear reaction 13C(p,γ)14N (NRA) which shows a sharp resonance in the excitation function at a proton energy of 1748 keV (Γ=75 eV FWHM). The depth resolution at the surface amounts to 31 nm due to energy spread of the proton beam (1.2 keV FWHM) and resonance width. The surface resolution of the NRA can be increased up to 8 nm when tilting the sample (surface normal) to an angle of 75° with respect to the proton beam direction. Using a NaI detector the detection limit of 13C in silicon is approximately 1 at.%. Comparative elastic backscattering measurements with 4He+ projectiles were performed at 2 MeV (Rutherford backscattering spectroscopy, RBS) and 3.45 MeV (high energy backscattering, HEBS) at a backscattering angle of 171°. The measured 13C depth distributions have been compared with a distribution calculated by the Monte Carlo algorithm T-DYN.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 9
    Digitale Medien
    Digitale Medien
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 734-739 
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Homogeneous ultra thin silicon nitride layers (SiNx layers) close to the surface have been produced by 10 keV 15N 2 + molecular ion implantation and an ion current density of 10 μA/cm2, into single crystal silicon at room temperature. Stoichiometric SiNx layers with thicknesses of about 28 nm (analyzed by NRA) were obtained at fluences of 1.5×1017 at/cm2. NRA analyses of samples annealed by EB-RTA at T=1150° C for 15 s indicated that the N/Si ratio and the layer thickness did not change drastically. FT IR ellipsometry analyses indicated the existence of Si3N4 bonds in as-implanted specimens. A disordered Si layer (d-Si, typically 15 nm thick) underneath the implantation region caused by the ion implantation was found by channeling RBS analyses. The d-Si layer partly recrystallized during EB-RTA showing a thickness of 6 nm afterwards. The SiNx layers showed no decomposition and detachment after EB-RTA. Due to EB-RTA, however, the smooth surface of the as-implanted specimens changed into a surface with remaining whisker-like structures surrounded by circular recesses as shown by AFM analyses. A model for the growth of these whisker-liker structures caused by low energy ion implantation and EB-RTA is presented on the basis of the thickness of the SiNx layer, the existence of the d-Si layer and the special annealing process.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 10
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 868-874 
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Ion beam analysis (IBA) methods were used for the characterization of interdiffusion in thin Au-Al multilayered systems. Conventional RBS with a high depth resolution at the specimen surface and at the interfaces (e.g. 14 nm in the depth of 255 nm) was used for gold depth profiling. In contrast to gold, the depth resolution of the aluminium distributions is limited even when the signals are in a background-free region of the spectrum. In addition, the aluminium depth profiles were measured using the resonant nuclear reaction 27Al(p, γ)28Si at 992 keV with a high depth resolution of 5 nm at the specimen surface. High-energy backscattering spectroscopy with 7.6 MeV 4He ions was used to investigate light element contaminantions (depth resolved), e.g. oxygen, at the specimen surface, the Au-Al interfaces and at the Au/C interface.
    Zusätzliches Material: 9 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...