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  • 2015-2019  (105)
  • 1995-1999  (56)
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  • 1
    Electronic Resource
    Electronic Resource
    In Situ Measurements of Oxygen Consumption and Hydrogen Evolution in Corrosion of some Metals in Liquid Water (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 703-712 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.185-188.703.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Study on the coercivity of granular solid iron (1995)
    Springer
    Applied physics 61 (1995), S. 407-413 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 75.60.Jp; 75.30.Gw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The iron granular solid, in which ultrafine iron particles are dispersed, has been prepared with both SiO2 and Cu matrices using the sol-gel method. The structure and morphology of these granular solid samples are investigated by X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). The magnetic properties are measured using a vibrating sample magnetometer with 20 kOe maximum applied field. It is found that the coercivity decreases very slightly with temperature from 80 to 300 K for these Fe–SiO2 and Fe–Cu granular solid samples with different average size of iron particles from 50 to 300 AÅ. The magnetic anisotropy has been obtained from the measured magnetization curves for these granular solid samples using the law of approach to saturation, and the obtained values of the effective magnetic anisotropy are all more than 106 erg/cm3, which are larger than the value of the magnetocrystalline anisotropy for bulk iron. The coercivity vs temperature for these granular solid samples has been calculated using the Kneller and Luborsky theory, in which the magnetic anisotropy values obtained from the law of approach to saturation are used. The trends of the calculated coercivity as a function of temperature are in reasonable agreement with the observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540115
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  • 3
    Electronic Resource
    Electronic Resource
    Giant enhancement of electron-induced dissociation of chlorofluorocarbons coadsorbed with water or ammonia ices: Implications for atmospheric ozone depletion (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 2861-2864 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Cl− yield produced by dissociative electron attachment of a submonolayer of CF2Cl2 is enhanced by factors of 102 and 104 when CF2Cl2 is coadsorbed with water ice and ammonia ice, respectively, on a surface at ∼25 K. Moreover, the magnitude of Cl− enhancement increases strongly with decreasing CF2Cl2 concentration. This enhancement is attributed to dissociation of CF2Cl2 by capture of electrons self-trapped in polar water or ammonia molecules. This process may be an unrecognized sink for chlorofluorocarbons in the atmosphere. Cl− ions produced may be directly or indirectly converted to Cl atoms, which then destroy ozone. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479613
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  • 4
    Electronic Resource
    Electronic Resource
    Specific heat of R3Co (R: La,Pr, and Nd) (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6439-6439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It was reported that La3Co is an interesting superconductor which has a critical temperature Tc of 4.5 K. Pr3Co and Nd3Co are ferromagnetic materials, which have Curie temperatures of 10 and 25 K, respectively. It was claimed that their magnetic structures are associated with the canting moment reflected to the symmetry of their crystal structure. In this paper we present the results of the specific heat measurement in these compounds in the temperature range from 2 to 30 K by a standard adiabatic heat pulse method. Two phase transitions are observed at 8 and 25 K in Nd3Co. One of them at 25 K corresponds to the Curie temperature mentioned above. Another is the transition corresponds to the moment reorientation, which was observed in the thermomagnetic curves and electrical resistivity measurement. This results claim that the moments are canted in this compounds. Magnetic entropy reaches 90% of R ln 2 at 25 K. However, it increases above the Curie temperature because the crystalline electric field effects plays an important role in this compounds. There are two peaks of 10 and 12 K in Pr3Co. The above temperature corresponds the Curie temperature but another was unknown. Thus we performed the specific heat measurement for Pr7Co3, which is very close to the Pr3Co in the phase diagram. We could observe the phase transition at 12 K for Pr7Co3 in the specific heat measurement and electric resistivity measurement. It is clear that the phase transition at 12 K comes from impurity of Pr7Co3 in our Pr3Co compound. We prepare the good quality sample of Pr3Co and try to examine the specific heat measurement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361964
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  • 5
    Electronic Resource
    Electronic Resource
    B incorporation in Ge(001) grown by gas-source molecular-beam epitaxy from Ge2H6 and B2H6 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6027-6032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion-mass spectrometry (SIMS) was used to determine the concentration and depth distribution of B incorporated into Ge(001)2×1 films grown on Ge(001) substrates by gas-source molecular-beam epitaxy using Ge2H6 and B2H6. B concentrations CB (3×1016–4×1019 cm−3) were found to increase linearly with increasing flux ratio JB2H6/JGe2H6 (8.2×10−3–1.7) at constant film growth temperature Ts (300–400 °C) and to increase exponentially with 1/Ts at constant JB2H6/JGe2H6 ratio. The difference in the overall activation energies for B and Ge incorporation over this growth temperature range is (approximately-equal-to)0.22 eV while B2H6 reactive sticking probabilities ranged from 8×10−4 at 300 °C to 2×10−5 at 400 °C. SIMS depth profiles from B modulation-doped samples and two-dimensional δ -doped samples grown at Ts〈350 °C were abrupt to within instrumental resolution with no indication of surface segregation. Structural analysis by in situ reflection high-energy electron diffraction combined with postdeposition high-resolution plan-view and cross-sectional transmission electron microscopy showed that all films were high-quality single crystals with no evidence of dislocations or other extended defects. B doping had no measurable affect on Ge deposition rates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360540
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  • 6
    Electronic Resource
    Electronic Resource
    B-doped Si(001) grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6:B incorporation and electrical properties (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3067-3076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: B-doped Si(001)2×1 films were grown on Si(001) substrates by gas-source molecular beam epitaxy using Si2H6 and B2H6. B concentrations CB (5×1016–5×1019 cm−3) were found to increase linearly with increasing flux ratio JB2H6/JSi2H6 (9.3×10−5–2.5×10−2) at constant film growth temperature Ts (600–950 °C) and to decrease exponentially with 1/Ts at constant JB2H6/JSi2H6 ratio. The B2H6 reactive sticking probability ranged from (approximately-equal-to)6.4×10−4 at Ts=600 °C to 1.4×10−3 at 950 °C. The difference in the overall activation energies for B and Si incorporation at Ts=600–950 °C is (approximately-equal-to)0.34 eV. A comparison of quantitative secondary-ion mass spectrometry (SIMS) and temperature-dependent Hall-effect measurements showed that B was incorporated into substitutional electrically active sites over the entire B concentration range investigated. SIMS B depth profiles from modulation-doped samples were abrupt with no indication of surface segregation to within the instrumental resolution limit and initial δ-doping experiments were carried out. Structural analysis by in situ reflection high-energy electron diffraction combined with post-deposition high-resolution plan-view and cross-sectional transmission electron microscopy showed that all films were high-quality single crystals with no evidence of dislocations or other extended defects. Temperature-dependent (20–300 K) hole carrier mobilities were equal to the best reported bulk Si:B values and in good agreement with theoretical maximum values. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358658
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructural measurements of amorphous GeTe crystallization by hot-stage optical microscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 517-521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved hot-stage transmission optical microscopy is used to characterize the nucleation and growth kinetics of amorphous GeTe thin-film crystallization. This technique provides experimental measurements of the fraction crystallized, the number of crystallites, and the crystallite size as a function of annealing time and temperature. The fraction-crystallized data are modelled using the Johnson–Mehl–Avrami formalism to give an Avrami exponent of 4, consistent with previous measurements via time-resolved reflection/transmission methods. Microstructural measurements provide sufficient data to deconvolute the individual contributions of nucleation and growth to this exponent. This work shows that crystallization of these films proceeds by nucleation at an increasing rate due to transient effects with isotropic two-dimensional growth in the film plane. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359034
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  • 8
    Electronic Resource
    Electronic Resource
    B-doped fully strained Si1−xGex layers grown on Si(001) by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4458-4466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: B-doped Si1−xGex layers with Ge fractions, determined by Rutherford backscattering spectroscopy, ranging from 0 to 0.28 and B concentrations, from quantitative secondary-ion spectroscopy measurements, between 5×1016 and 4×1019 cm−3 were grown on Si(001) at temperatures Ts=475–575 °C by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6. Film thicknesses ranged from 200 nm for alloys with x=0.28 to 800 nm with x=0.05 to 1.4 μm for Si. Structural analyses by high-resolution x-ray diffraction and reciprocal lattice mapping combined with transmission electron microscopy showed that all films were fully strained, with measured relaxations of only (approximately-equal-to)4×10−5, and exhibited no evidence of dislocations or other extended defects. The hole conductivity mobility μc,h in these layers increased continuously with increasing Ge concentrations, whereas the Hall mobility decreased yielding a Hall scattering factor that ranged from 0.75 for Si to 0.26 for Si0.72Ge0.28 but was not strongly affected by B concentration. μc,h, with CB=2×1018 cm−3, varied from 110 cm2 V−1 s−1 for Si0.95Ge0.05 to 158 cm2 V−1 s−1 for Si0.72Ge0.28, compared to 86 cm2 V−1 s−1 for Si, in good agreement with Boltzmann transport model calculations accounting for changes in the valence-band structure due to the effects of both alloying and biaxial in-plane compressional strain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363407
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  • 9
    Electronic Resource
    Electronic Resource
    Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1504-1513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth rates RGe of epitaxial Ge films deposited on Ge(001)2×1 and Si(001)2×1 substrates from Ge2H6 by gas-source molecular beam epitaxy were determined over a wide range of temperatures Ts (300–800 °C) and impingement fluxes JGe2H6(0.1–1×1016 cm−2 s−1). Steady-state RGe(Ts, JGe2H6) curves were well described at both low and high growth temperatures (Ts≤325 °C and Ts(approximately-greater-than)500 °C) using a model based upon dissociative Ge2H6 chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Ge monohydride for which the activation energy was found to be 1.56 eV. At intermediate temperatures, however, experimental RGe results exhibited a large positive deviation from model predictions due, as demonstrated by temperature programmed desorption measurements and transmission electron microscopy (TEM) observations, to kinetic surface roughening. Extensive (113) faceting resulted in both an increase in the number of active surface sites and higher reactive sticking probabilities. With increased growth temperatures, the facets became more rounded and film surfaces appeared sinusoidal in cross section. The zero-coverage Ge2H6 reactive sticking probability on Ge(001) in the high-temperature flux-limited regime was found to be 0.052, more than two orders of magnitude higher than that for GeH4. In situ reflection high-energy electron diffraction and post-deposition TEM examinations showed that Ge films deposited on Ge(001) at Ts≤325 °C grew in a layer-by-layer mode exhibiting a smooth flat surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358901
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  • 10
    Electronic Resource
    Electronic Resource
    Electron acceleration by a laser pulse in vacuum (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 825-827 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The acceleration of an electron by a circularly polarized, high-intensity ultrashort laser pulse in vacuum is studied. It appears that the energy of the electron can be accelerated significantly, and the electron moves almost along the propagation direction of the laser pulse. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872773
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