Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 933-935
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Periodic variation in optical second-harmonic generation during homoepitaxial growth of silicon on singular Si(001) surface is reported. The period of the oscillations corresponds to bilayer growth, and the oscillations are correlated with the mechanism associated with a two-dimensional layer-by-layer growth mode. This mechanism is tentatively attributed to periodic domain coverage variations analogous to the oscillatory response in linear optical technique of reflectance anisotropy. The current experiment, however, cannot distinguish this mechanism from another based on anisotropic second-harmonic generation response with respect to steps. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125634
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