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  • 2000-2004  (368)
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  • 1
    Electronic Resource
    Electronic Resource
    Measuring e-commerce efficiency: a data envelopment analysis (DEA) approach (2003)
    Bingley : Emerald
    Industrial management & data systems 103 (2003), S. 703-710 
    Details
    ISSN: 0263-5577
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Computer Science , Economics
    Notes: As a result of the dot-com collapse and the slowdown in the economy, the flood of venture capital dollars for e-commerce has evaporated. E-commerce companies have been enforced to review their business performance. E-commerce efficiency has been touted to be a critical component that can assist a company in its strategies to become successful. This study proposes a model for evaluating e-commerce efficiency using data envelopment analysis (DEA) approach. The model includes not only financial and operational measures, but also e-commerce specific measures. An illustrative example demonstrates that the DEA model can not only effectively reflect the relative efficiency of e-commerce firms but also identify their potential efficiency problems. Management can, therefore, take the right remedial actions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/02635570310506124
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of planting Eulaliopsis binata on soil quality in the red soil region of southern China (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 20 (2004), S. 0 
    Details
    ISSN: 1475-2743
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. Eulaliopsis binata is a perennial fibre-producing plant, which has a growing market in southern China and also has favourable effects on soil and water conservation. In the present study, three land use treatments, Eulaliopsis binata (EB), undisturbed natural grassland (NG) and orange grove (OG) were compared with respect to their effects upon a red soil after 20 years. Of these treatments, EB had the most favourable effects on soil physicochemical and biological properties and on soil microclimate. These properties were combined in a relative soil quality index (RSQI), which gave values in the order EB 〉 OG 〉 NG. Soil microbial numbers and enzyme activities were shown to be sensitive indicators of overall changes in soil properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-2743.2004.tb00350.x
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  • 3
    Electronic Resource
    Electronic Resource
    Growth kinetics of SiO2 on (001) Si catalyzed by Cu3Si at elevated temperatures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1412-1417 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy, glancing angle x-ray diffraction, and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the thickness of the oxide was found to increase parabolically with time with an activation energy of 0.4±0.2 eV. The activation energy is close to that of diffusivity of Cu in Si. At 180–200 °C, the growth rate became slower with increasing temperature. The growth of oxide tended to be discontinuous at the surface as the oxidation temperature was increased to a temperature at or higher than 300 °C. The anomalously fast growth of oxide at low temperatures is attributed to the presence of filamentary structures of Cu clusters in the oxide to expedite the diffusion of the oxidants through oxide. At 200–250 °C, more Cu atoms diffuse to the Cu3Si/Si interface and less Cu atoms stay in the oxide, which slows down the oxide growth. The lack of filamentary structures of Cu as diffusion paths retards the growth of SiO2. At 300 °C or higher temperatures, the lack of filamentary structures of Cu clusters stopped the growth of continuous oxide layer altogether. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373832
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  • 4
    Electronic Resource
    Electronic Resource
    Monodomain configurations due to bias effect in NiO/NiFe microstructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4948-4950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic domain configurations of microstructured permalloy exchange coupled by an antiferromagnetic (NiO) thin film is presented. NiO/NiFe bilayer micrometer array elements were fabricated using electron beam lithography through a lift-off technique. The magnetic force microscopy images of the elliptical and rectangular elements with various aspect ratios showed dipole-like magnetic domain structures. The bright/dark arc contrast associated with the magnetic pole strength was dependent on the anisotropic exchange field. Furthermore, the shape anisotropy can overwhelm anisotropic exchange in patterned elements with a high aspect ratio and thicker permalloy film. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373211
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on Curie temperature of magnetic ultrathin films Co/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7153-7155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties were investigated for the 2 ML Co/Cu(100) films grown at various temperatures from 125 to 350 K. By precisely controlling the film thickness, the influence of thickness on Curie temperature (TC) due to the finite size effect can be excluded. The Curie temperature of the 2 ML Co keeps almost invariant for the growth temperature (Tg) below 250 K, and drops drastically at Tg higher than 275 K. For Tg=340 K, TC dropped to 170 K which is only about half of 325 K for Tg=125 K. Accompanied with the increase of TC for the films grown at lower temperatures, the remanent Kerr signal as well as coercivity were enhanced. According to a simple theoretical estimation, the change of TC due to the variation of the magnetization and anisotropy was found to be consistent with the experimental results. The enhancement in TC or magnetization and anisotropy with various Tg should be traced back to the presence of island growth in the films grown at lower temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358827
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization and minimization of flicker in silicon light valves (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 831-837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed systematic characterizations of flicker in silicon light valves. It was found that there were four conduction mechanisms accounting for the flicker. These four mechanisms were residual dc charge on the silicon surface, voltage holding capability of the liquid crystal cell, voltage holding capability of the silicon panel, and parasitic capacitor coupling of the pixel. Major causes of these four mechanisms were identified. Solutions of flicker minimization were obtained for each mechanism. Among these solutions, offset of common voltage was found very useful to compensate for residual dc charge and parasitic capacitor coupling. Frame rate multiplication was found very useful for the minimization of flicker due to low voltage holding capabilities of the liquid crystal cell and silicon panel. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331073
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  • 7
    Electronic Resource
    Electronic Resource
    Field emission property of highly ordered monodispersed carbon nanotube arrays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3127-3129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A template-synthesis technique based on self-ordered hexagonal nanopore alumina templates was applied to synthesize highly ordered carbon nanotube arrays via thermal decomposition of ethylene with iron as the catalyst electrodeposited into the bottom of the pores. The resultant carbon nanotubes are monodispersed and have open ends with uniform sizes. It was found that the insulating oxide layer lying between the carbon nanotubes and the underlying aluminum greatly obstructs the electron emission from the carbon nanotube arrays. After the oxide layer was removed, the arrays exhibited excellent field emission properties with a threshold electric field of ∼2.8 V/μm and emission current density of 0.08 mA/cm2 at 3.6 V/μm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372205
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  • 8
    Electronic Resource
    Electronic Resource
    Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2819-2821 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor–acceptor pair transition become less resolved. The recombination lifetime of neutral-donor-bound exciton (I2) transition in undoped GaN increases with temperature as T1.5. However, the I2 recombination lifetime in As-doped GaN first decreases exponentially from 98 to 41 ps between 12 and 75 K, then increases gradually to 72 ps at 250 K. Such a difference is related to the isoelectronic As impurities in GaN, which generate nearby shallow levels that dominate the recombination process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316075
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  • 9
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3224-3226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of the donor-bound-exciton transition of undoped GaN exhibits a strong dependence on temperature. When In is doped into the film, the recombination lifetime decreases sharply from 68 to 30 ps, regardless of the measured temperature and In source flow rate. These observations might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126588
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3349-3351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of ∼180 meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced NI and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476400
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