Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 4016-4018
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dielectric loss in amorphous, thin-film oxide insulators produces a real part of the ac conductivity σ′(ω) that scales as ωs with s∼1. Conventional models explain this frequency dependence by hopping or tunneling of charge between neighboring defect sites. These models fail at low temperatures since they predict that σ′ should vanish at T=0. We observe that the ac conductivity of Ta2O5, ZnO, and SiO2 has a nonzero extrapolated value at T=0. We propose that this behavior is consistent with the predictions of a Coulomb glass, an insulator with a random distribution of charged defects. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1379984
Permalink
|
Location |
Call Number |
Expected |
Availability |