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  • Articles  (199)
  • 2000-2004  (173)
  • 1980-1984  (26)
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  • 1
    Electronic Resource
    Electronic Resource
    Dynamic effect of secondary equilibria in reversed-phase chromatography (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 4527-4536 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150664a017
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  • 2
    Electronic Resource
    Electronic Resource
    Variations of the infrared transmission properties with the metal–insulator transition in thin films of the yttrium-hydride system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6135-6138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates the variations of the infrared transmission spectra of yttrium-hydride films YHx during the hydrogen loading process for the frequency range 500–4000 cm−1. The results indicate that the transmittance slightly decreases in the dihydride phase, followed by a significant increase in the trihydride phase. In addition, the carrier concentration decreases, whereas the carrier relaxation time increases with hydrogen content. The hydrogen vibration modes at interstitial sites are completely screened in the dihydride phase. The screening effect decreases as the system goes through the metal–insulator transition. Moreover, the screening effect can be continuously tuned by simply varying the hydrogen content in the yttrium-hydride system. Analysis indicates that the absorption intensity of the vibration mode depends on the carrier concentration. This effect can be used as a diagnostic tool for estimating the carrier concentration and hydrogen content in rare-earth hydrides. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367879
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 747-752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous and polycrystalline compounds of (Ga,As) and (Al,As) grown at very low temperatures by molecular-beam epitaxy are characterized. The ultimate microstructure and the amount of excess arsenic incorporated in the (Ga,As) or (Al,As) layers are found to depend on the arsenic overpressure during the low-temperature growth. With lower arsenic overpressure, a polycrystalline structure prevails and less excess arsenic is observed inside the layer. In contrast, a high incorporation of excess arsenic achieved by high-arsenic overpressures leads to the formation of amorphous films. Upon wet oxidation, the lateral oxidation rate of (Al,As) is found to depend on the crystallinity of the (Al,As) layer and the amount of excess arsenic. During the same process, recrystallization proceeds in the (Ga,As) layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326466
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  • 4
    Electronic Resource
    Electronic Resource
    Dielectric studies of Cd1−x−yZnxMnyTe crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4476-4479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the dielectric properties of Cd1−x−yZnxMnyTe alloys studied by capacitance and dissipation factor measurements at temperature 5 K〈T〈475 K and frequency 20 Hz〈f〈1 MHz. A Debye-like relaxation of dielectric behavior has been observed, which is found to be a thermally activated process. The activation energies obtained from the capacitance and dissipation factor measurements are in excellent agreement. By means of our measurements, it is believed that the dielectric character of the carrier hopping among structural defects is responsible for the observed Debye relaxation. The relationship between the activation energy and Zn concentration has been established. The results are described by the four-center model, in which the number of Zn atoms appearing in the nearest-neighbor sites of a defect can have four possible configurations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351006
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layer (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6922-6924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation in In0.25Ga0.75As and In0.4Ga0.6As grown on GaAs substrates at low temperature has been studied before and after laterally oxidizing an underlying Al0.98Ga0.02As layer. The relaxation as a function of layer thickness has been measured by cross-sectional transmission electron microscopy and x-ray analysis. It is found that oxidation of the Al0.98Ga0.02As layer improves the relaxation of the strained InxGa1−xAs layer. Moreover, the interfacial misfit dislocations have been removed, and the threading dislocation density has decreased approximately by one order of magnitude after oxidation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287766
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of GaP/Al–oxide distributed Bragg reflectors for the visible spectrum (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1044-1046 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using very-low temperature (VLT) molecular-beam epitaxy (MBE), polycrystalline GaP/Al–oxide distributed Bragg reflectors (DBRs) have been fabricated. The use of high-energy band gap materials, such as GaP, allows for applications in the visible spectrum with minimal absorption of photons in the DBR. Through the use of VLT-MBE and control of the group-V overpressure, the microstructure can be controlled, resulting in either amorphous or polycrystalline material. Due to the nature of the amorphous material, the requirement of lattice matching is relaxed with no adverse effects to the underlying single crystal material. Two DBRs were fabricated, one reflecting at a wavelength of 550 nm and the other 480 nm. Using six pairs of polycrystalline GaP/Al–oxide, a reflectivity of ∼95% was achieved indicating a high-quality DBR suitable for device use. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350597
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  • 7
    Electronic Resource
    Electronic Resource
    Dielectric studies of ZnSe1−xTex epilayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1909-1911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of experimental investigations on dielectric properties of ZnSe1−xTex epilayers by capacitance and dissipation factor at temperature 5 K〈T〈475 K and frequency 20 Hz〈f〈1 MHz. A Debye-like relaxation of dielectric behavior has been observed, which is found to be a thermally activated process. The activation energies obtained from capacitance and dissipation factor are in very good agreement. The activation energies decrease with the increase of Se content, and range from 662 to 819 meV. The results are described by means of the four-center model, in which the number of different atoms occupying the nearest-neighbor sites of defects results in a different activation energy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355015
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  • 8
    Electronic Resource
    Electronic Resource
    Optical and luminescence properties of Sm3+-doped cadmium–aluminum–silicate glasses (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2642-2644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sm3+-doped cadmium–aluminum–silicate glasses (CdO–Al2O3–SiO2) have been fabricated and characterized optically. Intense visible lights and near-infrared emissions were observed under ultraviolet light and 488 nm laser excitation. The density, refractive index, optical absorption, Judd–Ofelt parameters, and spontaneous transition probabilities have been measured and calculated. Intense fluorescences at 1.2 and 1.29 μm wavelengths were observed, indicating that the glasses are promising materials for laser and optical amplifier applications operating in the 1.2–1.3 μm low-loss window of telecommunication fiber. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468919
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  • 9
    Electronic Resource
    Electronic Resource
    Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3971-3973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423773
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  • 10
    Electronic Resource
    Electronic Resource
    Photochemistry of syn- and anti-9,10-epoxy-1,4-dihydro-1,4-dipropyl-1,4-ethanonaphthalene-2,3-dione (1982)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 104 (1982), S. 292-294 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00365a056
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