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  • 2000-2004  (368)
  • 1955-1959  (9)
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  • 1
    Digitale Medien
    Digitale Medien
    Characterization and minimization of flicker in silicon light valves (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 831-837 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have performed systematic characterizations of flicker in silicon light valves. It was found that there were four conduction mechanisms accounting for the flicker. These four mechanisms were residual dc charge on the silicon surface, voltage holding capability of the liquid crystal cell, voltage holding capability of the silicon panel, and parasitic capacitor coupling of the pixel. Major causes of these four mechanisms were identified. Solutions of flicker minimization were obtained for each mechanism. Among these solutions, offset of common voltage was found very useful to compensate for residual dc charge and parasitic capacitor coupling. Frame rate multiplication was found very useful for the minimization of flicker due to low voltage holding capabilities of the liquid crystal cell and silicon panel. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1331073
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  • 2
    Digitale Medien
    Digitale Medien
    Effect of growth temperature on Curie temperature of magnetic ultrathin films Co/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7153-7155 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The magnetic and structural properties were investigated for the 2 ML Co/Cu(100) films grown at various temperatures from 125 to 350 K. By precisely controlling the film thickness, the influence of thickness on Curie temperature (TC) due to the finite size effect can be excluded. The Curie temperature of the 2 ML Co keeps almost invariant for the growth temperature (Tg) below 250 K, and drops drastically at Tg higher than 275 K. For Tg=340 K, TC dropped to 170 K which is only about half of 325 K for Tg=125 K. Accompanied with the increase of TC for the films grown at lower temperatures, the remanent Kerr signal as well as coercivity were enhanced. According to a simple theoretical estimation, the change of TC due to the variation of the magnetization and anisotropy was found to be consistent with the experimental results. The enhancement in TC or magnetization and anisotropy with various Tg should be traced back to the presence of island growth in the films grown at lower temperatures. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1358827
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  • 3
    Digitale Medien
    Digitale Medien
    Growth kinetics of SiO2 on (001) Si catalyzed by Cu3Si at elevated temperatures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1412-1417 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy, glancing angle x-ray diffraction, and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the thickness of the oxide was found to increase parabolically with time with an activation energy of 0.4±0.2 eV. The activation energy is close to that of diffusivity of Cu in Si. At 180–200 °C, the growth rate became slower with increasing temperature. The growth of oxide tended to be discontinuous at the surface as the oxidation temperature was increased to a temperature at or higher than 300 °C. The anomalously fast growth of oxide at low temperatures is attributed to the presence of filamentary structures of Cu clusters in the oxide to expedite the diffusion of the oxidants through oxide. At 200–250 °C, more Cu atoms diffuse to the Cu3Si/Si interface and less Cu atoms stay in the oxide, which slows down the oxide growth. The lack of filamentary structures of Cu as diffusion paths retards the growth of SiO2. At 300 °C or higher temperatures, the lack of filamentary structures of Cu clusters stopped the growth of continuous oxide layer altogether. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.373832
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  • 4
    Digitale Medien
    Digitale Medien
    Monodomain configurations due to bias effect in NiO/NiFe microstructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4948-4950 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetic domain configurations of microstructured permalloy exchange coupled by an antiferromagnetic (NiO) thin film is presented. NiO/NiFe bilayer micrometer array elements were fabricated using electron beam lithography through a lift-off technique. The magnetic force microscopy images of the elliptical and rectangular elements with various aspect ratios showed dipole-like magnetic domain structures. The bright/dark arc contrast associated with the magnetic pole strength was dependent on the anisotropic exchange field. Furthermore, the shape anisotropy can overwhelm anisotropic exchange in patterned elements with a high aspect ratio and thicker permalloy film. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.373211
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  • 5
    Digitale Medien
    Digitale Medien
    The Kinetics of the Decolorization of Anthocyanins by Fungal “Anthocyanase”1 (1956)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 78 (1956), S. 2390-2393 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja01592a013
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  • 6
    Digitale Medien
    Digitale Medien
    RACEMIZATION OF LYSINE BY PROTEUS VULGARIS (1958)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 80 (1958), S. 1006-1007 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja01537a071
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  • 7
    Digitale Medien
    Digitale Medien
    Field emission property of highly ordered monodispersed carbon nanotube arrays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3127-3129 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A template-synthesis technique based on self-ordered hexagonal nanopore alumina templates was applied to synthesize highly ordered carbon nanotube arrays via thermal decomposition of ethylene with iron as the catalyst electrodeposited into the bottom of the pores. The resultant carbon nanotubes are monodispersed and have open ends with uniform sizes. It was found that the insulating oxide layer lying between the carbon nanotubes and the underlying aluminum greatly obstructs the electron emission from the carbon nanotube arrays. After the oxide layer was removed, the arrays exhibited excellent field emission properties with a threshold electric field of ∼2.8 V/μm and emission current density of 0.08 mA/cm2 at 3.6 V/μm. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1372205
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  • 8
    Digitale Medien
    Digitale Medien
    Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3349-3351 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of ∼180 meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced NI and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1476400
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  • 9
    Digitale Medien
    Digitale Medien
    Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2819-2821 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor–acceptor pair transition become less resolved. The recombination lifetime of neutral-donor-bound exciton (I2) transition in undoped GaN increases with temperature as T1.5. However, the I2 recombination lifetime in As-doped GaN first decreases exponentially from 98 to 41 ps between 12 and 75 K, then increases gradually to 72 ps at 250 K. Such a difference is related to the isoelectronic As impurities in GaN, which generate nearby shallow levels that dominate the recombination process. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1316075
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  • 10
    Digitale Medien
    Digitale Medien
    Intense and stable blue-light emission of Pb(ZrxTi1−x)O3 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1082-1084 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A single band of photoluminescence (PL) has been detected at room temperature from the Pb(ZrxTi1−x)O3 (x=0–1.0) surface. The intense and stable PL band covers 475±50 nm (or 2.67±0.25 eV) wavelengths and the corresponding photoexcitation (PE) band is in the range of 305±45 nm. It is found that changing the x value causes a negligible shift of the PL and PE peaks, and the light emission is subject to the Pb presence. The minimal lifetime of the excited photons was found to be 0.03 ms at x=0.5 and the maximum lifetime of 0.60 ms can be achieved by either decreasing or increasing the x values. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1394946
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