Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 2665-2667
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dislocation reduction in GaN films grown on sapphire and silicon substrates was achieved by inserting thin InGaN layers grown in a selective island growth mode after partial passivation of the GaN surface with a submonolayer of silicon nitride. We show that this technique is most effective at reducing the pure edge dislocation density when it is high (i.e., 〉1010 cm−2) and less when the density is in the 108–109 cm−2 range. Thus, the structural quality of typically highly dislocated GaN on silicon films could be significantly improved, visible in a reduction of the (0002) full width at half maximum (FWHM) from 1300 arcsec for ordinary GaN on silicon to 800 arcsec for GaN films with silicon nitride/InGaN interlayers. In the case of GaN layers grown on sapphire (dislocation density ∼109 cm−2), the method resulted mainly in a reduction of the FWHM of the (101¯2) and (202¯1) diffraction peaks. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1319528
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