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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 14-19 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two microwave-sideband CO2 lasers have been used with a molecular-beam electric-resonance spectrometer to study the overtone C–O stretching vibration of methanol. Infrared-infrared double-resonance results have been obtained for levels involving the K=1 and 2, A symmetry, and the K=2, E2 symmetry species. In the A torsional symmetry case, radio frequency-infrared multiple resonance was used to obtain accurate asymmetry splittings for the vco=1 and 2, C–O stretching states. The asymmetry splitting constants determined for these states are in good agreement with the literature values for the first excited C–O stretching states. However, the nearly factor-of-2 change in the K=2 asymmetry splitting constant for the vco=2 level compared to the vco=0 and 1 level results suggests that this state is weakly perturbed. The overtone transition frequencies obtained in this work were combined with previous overtone Fourier-transform results in a global fit to a torsion–rotation Hamiltonian to refine the fundamental molecular constants for the second-excited C–O stretching state. The vco=2 torsional barrier height is found to be 372.227(3) or 374.984(7) cm−1 depending on data set used. In the analysis the overtone vibrational energy origin is constrained to 2054.831 13 cm−1. This barrier can be compared to the v0=0 and 1 values of 373.5421 and 392.35 cm−1, respectively. © 1995 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 6993-6999 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotationally resolved jet-cooled infrared spectra of the b-type ν9 (b2u) fundamental band at 1757 cm−1 and the a-type ν11 (b3u) fundamental band at 1261 cm−1 of the N–O stretches of N2O4 have been recorded with a diode laser. The ν9 band was found to be unperturbed, and it was possible to assign nearly 100% of the observed lines with a signal to noise greater than 2. In contrast, most of the Ka states of the ν11 band were found to be strongly perturbed. A large number of strong lines (≈20%) are unassigned and presumably arise from the perturbing state as well as torsional hot band transitions. The rotational analysis yields precise spectroscopic constants for the ground vibrational state which are interpreted in terms of a planar centrosymmetric dimer with a N–N bond length of 1.756(10) A(ring). The observed nuclear-spin statistical weights and near-zero inertial defect are consistent with the planar centrosymmetric structure determined in earlier electron-diffraction studies.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 831-839 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Microwave/radio-frequency-infrared multiple resonance has been used with an electric-resonance optothermal spectrometer to characterize a weak 21.6 MHz perturbation in the infrared spectrum of the ν14 C–O stretching vibration of 2-fluoroethanol. The infrared spectrum of 2-fluoroethanol was recorded at a resolution of ∼2 MHz using a tunable microwave-sideband CO2 laser. The spectrum is fit by an asymmetric-rotor Hamiltonian to a precision of 0.6 MHz, except for the transitions to the 413 upper state which are split into doublets by an interaction between the 413 level and a rotational level of a nearby background, or dark, vibrational state. Microwave/radio-frequency-infrared double and triple resonance reveals that the 413 level of the C–O stretching vibration is interacting with the 431 level of the dark state. The rotational constants determined for the dark state allow us to assign the perturbing state to the ν18+4ν21 combination vibration of the lowest energy conformer, where ν18 is the CCO bending vibration and ν21 is the C–C torsional vibration. From the weak ΔKa=2 matrix element between ν14 and ν18+4ν21 it is possible to derive a J=0 anharmonic interaction between these states of ∼3.5 GHz.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 9979-9985 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 7249-7262 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotational spectrum of dinitrogen pentoxide (N2O5) has been investigated between 8 to 25 GHz at a rotational temperature of ∼2.5 K using a pulsed-molecular-beam Fourier-transform microwave spectrometer. Two weak b-dipole spectra are observed for two internal-rotor states of the molecule, with each spectrum poorly characterized by an asymmetric-rotor Hamiltonian. The observation of only b-type transitions is consistent with the earlier electron-diffraction results of McClelland et al. [J. Am. Chem. Soc. 105, 3789 (1983)] which give a C2 symmetry molecule with the b inertial axis coincident with the C2 axis. Analysis of the 14N nuclear hyperfine structure demonstrates that the two nitrogen nuclei occupy either structurally equivalent positions or are interchanging inequivalent structural positions via tunneling or internal rotation at a rate larger than ∼1 MHz. For the two internal rotor states, rotational levels with Ka+Kc even have IN=0, 2, while levels with Ka+Kc odd have IN=1, where IN is the resultant nitrogen nuclear spin. This observation establishes that the equilibrium configuration of the molecule has a twofold axis of symmetry. Guided by ab initio and dynamical calculations which show a planar configuration is energetically unfavorable, we assign the spectrum to the symmetric and antisymmetric tunneling states of a C2 symmetry N2O5 with internal rotation tunneling of the two NO2 groups via a geared rotation about their respective C2 axes. Because of the Bose–Einstein statistics of the spin-zero oxygen nuclei, which require that the rotational–vibrational–tunneling wave functions be symmetric for interchange of the O nuclei, only four of the ten vibrational-rotational-tunneling states of the molecule have nonzero statistical weights. Model dynamical calculations suggest that the internal-rotation potential is significantly more isotropic than implied by the electron-diffraction analysis. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2458-2464 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral oxidation kinetics of AlAs0.56Sb0.44 on InP substrates have been investigated to understand the antimony segregation process during oxidation. Oxidation layers were grown between GaAsSb buffer and cap layers on InP substrates by molecular beam epitaxy. Oxidation temperatures between 325 and 500 °C were investigated for AlAsSb layer thicknesses between 100 and 2000 Å. At low oxidation temperatures (Tox≤400 °C), the process is reaction limited with a linear dependence of oxidation depth on time. At intermediate oxidation temperatures (400〈Tox〈450 °C), the oxidation process becomes diffusion limited. At high oxidation temperatures, the oxidation process is termed self-limiting since at 500 °C the process stops entirely after oxidation times on the order of 5 min and distances of 40 μm. It is shown that the antimony float layer lags the oxidation front by a temperature-dependent distance, which suggests that the antimony may change the structure of the oxide at the front and cause self-limiting behavior. The oxidation kinetics of AlxGa1−xAsSb and AlxIn1−xAsSb have also been investigated. Antimony segregation is not suppressed during oxidation of Ga-containing layers and AlInAsSb quaternary alloys do not oxidize laterally at measurable rates in the range 400–525 °C. SiNx cap layers deposited after growth and before oxidation do not affect the Sb segregation or oxidation rate, but do smooth the cap surface by preventing uneven Sb metal segregation to the cap/oxide interface. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1933-1943 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and investigate a model for the development of cross-hatch surface morphology in growing mismatched layers. The model incorporates two important elements: (i) strain relaxation due to dislocation glide in the layer (film) interior that is also associated with misfit dislocation formation at the film/substrate interface and (ii) lateral surface transport that eliminates surface steps that originated from dislocation glide. A combination of dislocation-assisted strain relaxation and surface step flow leads to the appearance of surface height undulations during layer growth. A Monte Carlo simulation technique was applied to model dislocation nucleation events in the course of strain relaxation. The simulation was used to model the influence of dislocations on film surface height profiles. The surface height displacement was calculated from the analytic elasticity solutions for edge dislocations near a free surface. The results of the modeling predict that the average amplitude of the surface undulations and their apparent wavelength both increase with increasing film relaxation and film thickness. The developed cross-hatch pattern is characterized by an atomically smooth but mesoscopically (lateral dimensions ∼0.1–10 μm) rough surface morphology. The conclusions of the model are in agreement with atomic force microscopy observations of cross-hatch surface relief in In0.25Ga0.75As/GaAs samples grown well beyond the critical thickness for misfit dislocation formation. © 2002 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 845-847 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layers of hypercritical thickness InGaAs/AlAs/GaAs have been shown to strain relax when the underlying AlAs layer is laterally oxidized. InxGa1−xAs layers of composition 0.2≤x≤0.4 have been investigated at thicknesses in the range 5–20 times the Matthews–Blakeslee critical thickness hc. The amount of strain relieved does not depend on the InGaAs-layer thickness, the initial strain state, or the composition of the material, but it does strongly depend on the oxidation temperature. The structure of the strain-relaxed InGaAs layer has been investigated using plan-view transmission electron microscopy. It is shown that the misfit dislocation density in In0.3Ga0.7As grown to 15 times the critical thickness (660 Å) has been reduced by two orders of magnitude after lateral oxidation. It is proposed that this is due to interfacial oxidation, which consumes the misfit dislocation cores. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3740-3742 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth is developed. It is argued that both strain relaxation associated with misfit dislocation formation and lateral surface step flow are required for the appearance of mesoscopic scale surface undulations during layer growth. The results of Monte Carlo simulations for dislocation assisted strain relaxation and consequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% relaxed In0.25Ga0.75As layers. This is supported by atomic force microscopy observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation formation. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 11 (1978), S. 671-671 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
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