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  • 1
    Publication Date: 2000-10-09
    Print ISSN: 0953-8984
    Electronic ISSN: 1361-648X
    Topics: Physics
    Published by Institute of Physics
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3312-3317 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In an effort to elucidate the mechanism of scallop formation during reflow of solder/Cu joints in flip-chip and ball-grid array technologies, a planar intermetallic compound layer (mostly Cu6Sn5) was initially formed by solid-state annealing of SnPb/Cu joints at 150 °C for ten days. Upon subsequent reflow, dissolution of the intermetallics and formation of scallops were observed. Detailed investigation has indicated that a thermal grooving process due to dissolution of the intermetallic compound during the initial reflow cycles contributes to the formation of scalloped structures, the morphology of which is dictated by the force equilibrium condition. Upon subjecting the solder joints to several reflows, the average intermetallic layer thickness was found to first decrease and then increase, which is shown to be in good agreement with the prediction made by a model based on simultaneous dissolution and growth of the intermetallic compound during reflow. The kinetics of dissolution-growth process during reflow has also been shown to depend on the initial intermetallic thickness and the shape of the solder cap. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1231-1233 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily boron-doped diamond film surfaces were investigated using ultra high-vacuum scanning tunneling microscopy. Negative differential resistance (NDR) was observed in the I–V curves measured from the diamond facets using scanning tunneling spectroscopy. NDR peaks with a peak-to-valley ratio as high as 90 were observed in about half of the I–V curves measured at room temperature. The NDR phenomenon is attributed to the existence of localized electron states on the diamond film surfaces. The I–V curves obtained at the diamond grain boundaries showed the characteristics of the graphite phase, while those acquired from the grain facets manifested obvious rectification in accordance with the wide band gap of diamond. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2468-2470 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped and undoped silicon nanowires (SiNWs). STM images clearly showed the presence of nanoparticle chains and nanowires in the B-doped SiNWs sample. Clear and regular nanoscale domains were observed on the SiNW surface, which were attributed to boron-induced surface reconstruction. STS measurements have provided current–voltage curves for SiNWs, which showed clearly enhancement in electrical conductivity by boron doping. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1134-1136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion beam assisted deposition (IBAD) of refractory tungsten nitride films onto GaAs is attempted for the first time. This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter deposition. Schottky diode characteristics of W/ and WNx/GaAs and their thermal stability were investigated by capping the refractory films with SiO2 films and subsequent annealing at 700–900 °C for 30 min. While both tungsten and tungsten nitride contacts were stable up to 850 °C, the tungsten nitride contact showed better thermal stability and higher Schottky barrier height. The Schottky barrier heights of W/ and WN0.27/GaAs diodes annealed at 850 °C were 0.71 and 0.84 eV, respectively. These preliminary results are comparable to those of the best results reported with the conventional sputtering methods.
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  • 7
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The effect of replacing fishmeal with soybean meal in the diet and also partial dietary protein replacement with carbohydrates, on sharpsnout sea bream (Diplodus puntazzo) total lipid fatty acid profile was studied. A group of sharpsnout sea bream of 200 g were fed a diet containing either 0%, 20%, 40% or 60% of protein from soybean meal. In a second experiment, fish (126 g) were fed diets with reduced protein and increased carbohydrate percentages. Fishmeal replacement with soybean meal increases the fish polyunsaturated fatty acids (PUFA) content, mainly due to linoleic acid, which is present in high quantities in soya. But as a consequence, the inclusion of soybean meal produces a significant decrease of the n-3/n-6 relationship (from 2.21±0.07 to 1.66±0.05). Replacement of protein with carbohydrate hardly modifies the diet fatty acid profile. As the fishmeal content decreases, there is a slight reduction of saturated fatty acids, the diet with lowest protein percentage having the highest monounsaturated fatty acids and lowest PUFA proportions. Fat quality indices are similar to those reported in previous studies, and in the case of fish under soy-containing diets, they are favourables. However, fishmeal replacement causes a loss of n-3 fatty acids that is important to compensate using other sources rich in this type of fatty acids.
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 426-432 (Aug. 2003), p. 1945-1950 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Current genetics 11 (1987), S. 617-624 
    ISSN: 1432-0983
    Keywords: Zea mays ; Chloroplast DNA ; Length mutations ; Taxonomy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The chloroplast (cp) genomes of Zea species are distinguished by at least four restriction fragment length (insertion/deletion) mutations. All four mutations occur in the large unique sequence region of the genome. Restriction fragments containing three of these mutations were cloned. The large and small forms of two of the mutated fragments were sequenced. This revealed 80 and 83 by insertion/deletions. The inserted/deleted segments are not parts of tandem repeats nor were they flanked by direct repeats. Two other insertion/deletion mutations were not sequenced, but their sizes were estimated to be 150 and 250 by by size fractionation on agarose gels. Use of Tripsacum pilosum and Sorghum bicolor as outgroups suggests that three of the fragment length mutations arose via deletions. The fourth could not be polarized. The three species of section Luxuriantes of Zea were identical to one another for each of the four length mutations, and they were consistantly distinguished from the taxa of section Zea by these mutations. These data support the division of Zea into the above named sections.
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  • 10
    ISSN: 1617-4623
    Keywords: Sunflower ; Albumin gene ; DNA sequence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The complete sequence of a sunflower (Helianthus annuus) gene, HaG5, encoding a 2 S albumin storage protein was determined. The predicted unprocessed precursor has 295 amino acids, is rich in glutamine residues (24%) and contains a hydrophobic amino-terminus that is similar to the consensus signal peptide. Amino acid sequencing of the mature protein revealed extensive post-translational processing. Nuclease protection and primer extension analysis indicated a major transcriptional start 30 nucleotides 5′ of the predicted ATG start codon. Additional sequence data, determined from a nearly full length cDNA recombinant, indicate that HaG5 is a member of a small gene family comprised of at least two divergent genes. Comparison of the predicted HaG5 gene product with sequences of other known plant proteins revealed distant but significant homology with the napins of Brassica and other heterogeneous seed proteins in the albumin superfamily.
    Type of Medium: Electronic Resource
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