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  • 1
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract A two-stage, cyclic fed-batch bioprocess was designed, and its performance evaluated to improve rice α-amylase productivity by the yeast Yarrowia lipolytica SMY2 (MatA, ade1, ura3, xpr2), ATCC 201847, containing a replicative plasmid coding for a rice α-amlyase. Transcription of the recombinant gene is controlled by the XPR2 promoter. The first stage (or growth stage) was operated in the fed-batch mode, and the growth medium, designed to maintain a constant high cell density (i.e., 60 g/l), was fed according to a predetermined and preprogrammed optimal feed rate which, in turn, maintained the specific cell growth rate at an optimal value (i.e., 0.1 h−1). Typically, when the volume in the first stage reached a preset value, a portion of culture broth (i.e., 55%) was transferred to the second stage (or production stage). The remaining cells in the growth stage were then fed with fresh growth medium according to the bioprocess control strategy developed, while induction of α-amylase expression and its production was taking place in the second stage. The second stage was also operated in the fed-batch mode, and the production medium designed to maintain a constant high cell density and high productivity of heterologous protein was fed at a predetermined and preprogrammed rate, which maintained the specific cell growth rate at an optimal level. The volumetric α-amylase productivity achieved (1835 units l−1 h−1) from the two-stage, cyclic fed-batch culture process was twofold higher than that of the fed-batch culture process. The genetic stability of the recombinant strain and the design of optimal media for growth and production stages are also critically important to a successful implementation of the two-stage, cyclic fed-batch process for production of heterologous protein.
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 58 (1993), S. 4511-4512 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2567-2569 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Catastrophic optical damage (COD) in Al-free InGaAs/InGaP 0.98 μm lasers has been investigated using real-time electroluminescence (EL) and transmission electron microscopy (TEM). From EL images, we observed that multiple bright spots initiated from one of the facets and then propagated to the center of the cavity during the COD process. It is clarified by the TEM analysis that the propagation of bright spots resulted in 60-nm-wide Moiré fringe along the cavity and the crystalline phase of the active area became polycrystalline. Highly nonradiative polycrystalline phase of the active area is the major cause of COD failure in the Al-free 0.98 μm lasers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1134-1136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion beam assisted deposition (IBAD) of refractory tungsten nitride films onto GaAs is attempted for the first time. This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter deposition. Schottky diode characteristics of W/ and WNx/GaAs and their thermal stability were investigated by capping the refractory films with SiO2 films and subsequent annealing at 700–900 °C for 30 min. While both tungsten and tungsten nitride contacts were stable up to 850 °C, the tungsten nitride contact showed better thermal stability and higher Schottky barrier height. The Schottky barrier heights of W/ and WN0.27/GaAs diodes annealed at 850 °C were 0.71 and 0.84 eV, respectively. These preliminary results are comparable to those of the best results reported with the conventional sputtering methods.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1692-1695 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of gallium nitride (GaN) layers 7.5–870 μm thick was studied with changes in temperature and excitation intensity. These layers were grown by hydride vapor phase epitaxy on a buffer layer of aluminum nitride (AlN). The photoluminescence emission consists of the shallow-donor bound exciton at 3.471 eV and the free hole-to-electron bound to a donor (possibly a nitrogen vacancy VN or oxygen) transition at 3.40–3.433 eV. The peak position varies depending on the thickness of the GaN and AlN layers. The localized donor due to donor concentration fluctuation is attributed to the variable peak position. The observed 3.269 eV emission is attributed to a donor–acceptor pair transition. The relationship between the peak and the excitation intensity is described accurately by a theoretical description which yields Ed=32 meV and Ea=230 meV, which originate, respectively, from a silicon donor and carbon acceptor. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3604-3606 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic layer deposition technique has been applied to the growth of Al2O3 thin films on the substrates of Si(100), 100-nm-thick SiO2 covered Si(100) [SiO2/Si(100)], and 90-nm-thick TiN covered SiO2/Si(100). The growth rate of Al2O3 films was 0.19 nm/cycle and identical for all substrates employed under the surface controlled process. However, the optical properties of Al2O3 films were significantly affected by different substrates. The average interband-oscillator energy and refractive index parameter were determined to be 3.330 eV and 2.992×10−14 eV m2 for Al2O3 film grown on Si(100), while those for the film grown on SiO2/Si(100) were 4.492 eV and 2.074×10−14 eV m2, respectively. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physiology 43 (1981), S. 637-649 
    ISSN: 0066-4278
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Biology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Aquaculture research 34 (2003), S. 0 
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thin Solid Films 97 (1982), S. 97-106 
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of industrial microbiology and biotechnology 18 (1997), S. 255-259 
    ISSN: 1476-5535
    Keywords: Keywords: curdlan production; Agrobacterium sp; nitrogen limitation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Maltose and sucrose were efficient carbon sources for the production of curdlan by a strain of Agrobacterium sp. A two-step, fed-batch operation was designed in which biomass was first produced, followed by curdlan production which was stimulated by nitrogen limitation. There exists an optimal timing for nitrogen limitation for curdlan production in the two-step, fed-batch operation. Maximum curdlan production (60 g L−1) was obtained from sucrose with a productivity of 0.2 g L−1 h−1 when nitrogen was limited at a cell concentration of 16.0 g L−1. It was also noted that the curdlan yield from sucrose was as high as 0.45 g curdlan g−1 sucrose, and the highest specific production rate was 1.0 g curdlan g−1 cells h−1 right after nitrogen limitation. Of particular importance was the use of molasses as a cheap carbon source to produce curdlan in the two-step, fed-batch cultivation. As high as 42 g L−1 of curdlan with a yield of 0.35 g curdlan g−1 total sugar was obtained after 120 h of fed-batch cultivation.
    Type of Medium: Electronic Resource
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