ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report the effect of changing the growth conditions in the case of bulk 3C-SiCcrystals grown by the Travelling Zone Method when the seed is placed on the top graphite rod.First, we investigated the effect of changing the temperature gradient and the cooling ramp. Nextwe studied the effect of changing the seed polytype and misorientation. Every time, working in the1700 °C temperature range, the grown polytype was 3C. From X-ray analysis we evidenced a betterhetero-epitaxial relationship between the seed and layer when a low misorientation angle was used.Better quality and homogeneity were obtained on the first 500 .m of the layer and, beyond thisthickness, micro-Raman measurements show that the effect of solvent (Si) incorporation is not yetfully under control
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.29.pdf
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