ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Nb-content dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature(1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on (100)-face ofLaAlO3 single crystal substrates by a pulsed-laser deposition. Carrier concentration, Hall mobility,Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentallyevaluated at 1000 K with an aid of theoretical analysis. ZT reached 0.37 (20%-Nb-doped SrTiO3 epitaxialfilm) at 1000 K, which is the largest value among n-type oxide semiconductors ever reported
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.809.pdf
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