ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The understanding of the structure and associated defect level of point defects in SiC isimportant because the material is to be used both as a semiconductor and semi-insulator.Production of the latter is achieved by compensation of unavoidable impurities using defects thatrequire more energy for ionization than the unintentional donors or acceptors. The purpose of thepresent work is to measure the defect energy level of one center in high resistivity 4H SiC usingphoto-induced electron paramagnetic resonance (photo-EPR). The center is identified as SI-5, anEPR signal that others have attributed to the negative charge state of the carbon vacancy-carbonantisite pair, −C Si V C . Samples containing this defect exhibit two different photo thresholds, whichdepend on the resistivity activation energy, Ea. For samples with Ea less than 0.8 eV, a photothresholdat 0.75+/- 0.05 eV is observed, but for those with Ea greater than 0.8 eV, the threshold isbetween 2 and 2.5 eV. Previous work focused on the former case. Here, the SiC substrates with thelarger Ea are emphasized, showing that the photo-threshold likely measures the neutral to negativedefect level, − / 0C Si V C
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.385.pdf
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