ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Geophysical Union  (20)
  • American Institute of Physics (AIP)  (9)
  • Emerald
  • Paleontological Society
  • American Meteorological Society (AMS)
  • 2015-2019  (26)
  • 1990-1994  (12)
  • 1
    Electronic Resource
    Electronic Resource
    Bingley : Emerald
    Kybernetes 23 (1994), S. 10-34 
    ISSN: 0368-492X
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Computer Science
    Notes: Provides definitions of the three concepts in the title and explores their interrelationships. Distinguishes six alienation dimensions - powerlessness; meaninglessness; normlessness; social isolation; cultural estrangement; self-estrangement - and combines them with three kinds of participation: spontaneous, negative, and compensatory. Describes increasing societal complexity from a general systems perspective. Explores the psycho- and sociogenesis of unalienated as well as alienated participation. Increasing societal complexity creates new forms of alienation and participation, but also resistances of groups that feel threatened or left out by an excessively fast rate of change, which in turn threatens macro-societal stability. Those left without the means to participate in the economic or political process tend to be the alienated "negative participants"; they are generally destructive and anti-outgroup as a result of personal experiences or economic deprivation.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Bingley : Emerald
    Kybernetes 23 (1994), S. 46-61 
    ISSN: 0368-492X
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Computer Science
    Notes: Aims to analyse the influence of Norbert Wiener's ideas on the social sciences and on social systems, including society as a whole. Describes Wiener's own attitudes regarding the applicability of cybernetics to social systems and his vision on the development of modern society. Highlights sociologists and political scientists who were inspired by his ideas and deals with researchers who tried to apply his ideas to social systems. Concludes by evaluating to what extent specific ideas of Wiener have impacted on the social sciences.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7774-7777 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During scanning tunneling microscopy measurements on YBa2Cu3O7 thin films with positive sample bias voltages, different kinds of surface modifications appear. While in the topography condition no surface modification occurs, the cleaning and etching conditions irreversibly change the surface topography. In the deformation condition a strong elastic deformation of the tip and/or the surface is observed. It is shown that field evaporation of material from the surface to the tip is responsible for the observed surface modification. In consequence, the tip is contaminated with different oxides. Localized states in the oxides make resonant tunneling of electrons through the oxide layer possible. The configuration of these localized states determines the kind of surface modification by the scanning tunneling microscope. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2660-2662 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used the constant photocurrent method to characterize a-Si:H based pin cells in order to discuss the correlation between the device characterizing quantity, the fill factor (FF), and the number of defects which is related to the quantity αD (subbandgap optical absorption constant). We show that the changes in the i layer due to the creation of metastable defects after light soaking or current injection−characterized by αD−directly correlate with the changes in solar cell performance (FF). We are able to show that other reasons than an increased defect density can lead to a reduction of the fill factor. Further we try to quantify αD in terms of a defect density of states.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2180-2182 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial Y1B2Cu3Ox thin films (Tc,o ≥ (R18) 90 K, jc (77 K)≥ (R18)3 ×106A/cm2) were in situ grown on MgO by KrF excimer laser ablation. The combination of in situ resistance measurements, x-ray diffraction experiments, Tc measurements, scanning electron microscopy and scanning tunneling microscopy gives clear indications for an island growth on these substrates and shows growth steps and spirals at the film surface.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Publication Date: 2016-07-26
    Description: To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO 2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813  μ W m −1  K −2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO 2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Publication Date: 2015-07-03
    Description: We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Publication Date: 2016-07-07
    Description: In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Publication Date: 2015-01-16
    Description: Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO x by thermal annealing of co-sputtered Ge-TaZrO x layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Publication Date: 2016-02-10
    Description: During dynamic random access memory (DRAM) capacitor scaling, a lot of effort was put searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very promising results for a SrTiO 3 based capacitor with a record low capacitance equivalent thickness value of 0.2 nm at target leakage current are presented. Due to the material properties of SrTiO 3 films (high vacancy concentration and low band gap), which are leading to an increased leakage current, a physical thickness of at least 8 nm is required at target leakage specifications. However, this physical thickness would not fit into an 18 nm DRAM structure. Therefore, two different new approaches to develop a new ZrO 2 based DRAM capacitor stack by changing the inter-layer material from Al 2 O 3 to SrO and the exchange of the top electrode material from TiN to Pt are presented. A combination of these two approaches leads to a capacitance equivalent thickness value of 0.47 nm. Most importantly, the physical thickness of
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...