ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (2)
  • 2000-2004
  • 1995-1999  (2)
  • 1998  (2)
Collection
Publisher
Years
  • 2000-2004
  • 1995-1999  (2)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Intrinsic Josephson effect in La2−xSrxCuO4 mesa junctions with niobium counter electrode (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2820-2822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reveal the intrinsic Josephson effect in a La2−xSrxCuO4 (LSCO) high-Tc superconductor. Nb counterelectrodes are deposited on top of mesas, which are formed on surfaces either parallel or perpendicular to the ab plane of LSCO single crystals. Nb/LSCO interfaces behave as SNS Josephson junctions. For the junctions parallel to the ab plane, we observe many branches in the current–voltage characteristics due to intrinsic Josephson effects. The voltage gaps between the branches are typically 0.1 mV, which is much smaller than the superconducting energy gap 2Δ≅11 mV expected for LSCO from Bardeen–Cooper–Schrieffer theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122601
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Correlation between electron mobility and silicon-hydrogen bonding configurations in plasma-hydrogenated polycrystalline silicon thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2436-2438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the relationship between electron mobility and Si-hydrogen bonding configurations in poly-Si thin films after plasma-hydrogenation treatment. A 50-nm-thick amorphous-Si film was crystallized by excimer laser irradiation followed by plasma hydrogenation. Measurements of the Hall effect and Raman scattering demonstrated that mobility increased under the Si-H dominant state and decreased under the Si-H2 dominant state, which were respectively caused by adjusted and excessive hydrogenation times. Mobility degradation was recovered by dissociation of excess H atoms by annealing. The origin of the correlation is discussed in terms of imperfections such as grain boundaries and in-grain defects.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121376
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...