ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (7)
  • ZBW – Leibniz Information Centre for Economics Kiel, Hamburg
  • 1995-1999  (7)
  • 1995  (7)
Collection
Years
  • 1995-1999  (7)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 661-664 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a Monte Carlo study of hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4744-4745 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For the quasicontinuous potentiostatic electrodeposition of compound semiconductors, up to four injection anodes of different and differently changing resistances were used simultaneously. The design of an automatic current control unit to keep the relative anodic currents constant is shown. To allow for dynamic adjustment of the working potential, a ramp generator is added. The all-in-one design facilitates completely oscillation-free operation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2320-2322 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe step-graded digital-alloy buffers using alternate layers of Al0.5Ga0.5As and Al0.5Ga0.5As0.65Sb0.35 grown on GaAs substrates by molecular beam epitaxy. The buffers consist of three sets of superlattices with AlGaAs/AlGaAsSb layer thicknesses of 7.7/2.3 nm, 5.4/4.6 nm, and 3.1/6.9 nm, respectively, terminating in a lattice constant equal to that of bulk In0.32Ga0.68As. Transmission electron micrographs show that most of the misfit-generated dislocations lie near the steps in pseudoalloy composition, and atomic force micrographs indicate a rms surface roughness of 3.6 nm. A 20.5-period lattice-matched InGaAs/InAlAs reflector stack grown on such a buffer has a peak reflectivity of 98% near 1.3 μm. These buffers provide potentially useful substrates for optoelectronic device applications near 1.3 μm using strained InGaAs active regions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface normal optoelectronic devices operating at long wavelengths ((approximately-greater-than)1.3 μm), require distributed Bragg reflectors (DBRs) with a practical number (≤50) of mirror layers. This requirement implies a large refractive index difference between the mirror layers, which is difficult to achieve in the traditionally used phosphide compounds. We demonstrate a highly reflective AlAsSb/GaAsSb DBR grown nominally lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.74 μm with maximum reflectivity exceeding 98%, which is well fitted by our theoretical predictions. Atomic force microscopy and transmission electron microscopy indicate reasonable crystal quality with some defects due to an unintentional lattice mismatch to the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2825-2827 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe growth by molecular-beam epitaxy of InGaAlAs multilayers using a versatile and agile technique that allows a wide range of band gaps and strains for the individual layers. In our approach, the layers are most generally pseudoalloys produced by growing short-period superlattices containing ternary or quaternary layers, in various combinations, without changing the temperatures of the single In, Ga, Al, and As effusion cells. To illustrate the method, we have designed, grown, and characterized a separate-confinement, strained layer light-emitting diode operating at 1.5 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1957-1959 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of In0.15Ga0.85As/GaAs multilayers are reported on lattice matched In0.04Ga0.96As buffer layers using two different starting substrates: (1) a bulk, lattice-matched, Czochralski-grown In0.04Ga0.96As wafer, and (2) a bulk (unmatched) GaAs wafer. The structures, grown by molecular-beam epitaxy, consist of a 200-nm-thick undoped buffer plus a 28-1/2 period modulation-doped multilayer having 10-nm-thick In0.15Ga0.85As quantum wells and 25-nm-thick GaAs barriers doped over their 10-nm central region. The 4 K Hall mobility of the multilayer grown on the InGaAs substrate is 57% larger than the structure grown on GaAs, despite a low dislocation density observed in transmission electron micrographs of the latter. These results suggest that bulk ternary substrates can provide enhanced performance for future electronic and optoelectronic devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 1406-1412 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Formation of anions induced by collisions of low energy electrons (0–14 eV) with the perfluorinated compounds CF4, C2F6, C2F4, and C6F6 is studied (a) in the gas phase under collision-free conditions in a beam experiment, and (b) in the condensed phase where the electron beam interacts with the molecules deposited under ultrahigh vacuum conditions in definite amounts on a cold (20 K) metallic substrate. In the gas phase different fragment anions [F−, (M–F)−, CF−3] are formed via dissociative attachment (DA). From condensed molecules, desorption of anions is virtually restricted to F−. This can be explained by the polarization interaction of the excess charge and the desorption kinematics preferring desorption of light fragment ions. Below 10 eV F− desorption is induced by DA at or near the surface while above 10 eV a nonresonant signal from dipolar dissociation is observed. The present results indicate that the desorption cross section is essentially controlled by the amount of translational energy released to F− in the dissociation of the precursor anion (M−). In CF4 the precursor ion CF−4 is assigned as the T2 shape resonance with its pronounced σCF* antibonding nature. This results in F− with high kinetic energy release, and, consequently, a high desorption cross section. In C2F6 the decomposition of the transitory anion is less direct resulting in a comparatively low desorption yield. In C2F4 and C6F6, on the other hand, electron capture proceeds via the π* system associated with indirect (statistical) decomposition processes. This results in a very low desorption cross section for both compounds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...