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  • Articles  (26)
  • 2000-2004
  • 1990-1994  (26)
  • 1994  (10)
  • 1990  (16)
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  • Articles  (26)
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  • 2000-2004
  • 1990-1994  (26)
Year
Journal
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2068-2072 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard amorphous films of a-C:D were deposited by a rf glow discharge in CD4. The implantation of 40-keV 3He+ ions in these films was studied as a function of the helium fluence at temperatures between 100 K and room temperature. The trapped amounts of helium and the deuterium losses in the layer were measured in situ using nuclear reaction analysis with 0.5-MeV D+ and 1-MeV 3He+ beams, respectively, and subsequent ex-situ elastic-recoil detection analysis. A transient helium retention appears in the carbonized layers, occurring only at temperatures below 200 K. Above a critical fluence which depends on temperature and ion flux, outdiffusion of He is observed which is ascribed to the formation of diffusion channels by radiation damage. The deuterium depletion induced by helium bombardment below 200 K sets on in correlation with the helium outdiffusion, but is otherwise independent of the helium trapping.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3169-3177 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the retention of deuterium in polycrystalline nickel were obtained at 193 and 223 K through elastic-recoil detection using a 2.6-MeV 4He beam. The depth profiles so obtained show striking differences with their counterparts measured at higher temperatures. Although the profiles are homogeneous at implanted fluences lower than 3×1018 D+ cm−2, they present a large peak centered slightly deeper than the implantation range at higher fluences. Additional features develop as one further implants. The large peak is associated with the buildup of nickel deuteride. A one-dimensional computer model is developed which partly reproduces the features of the measured depth profiles.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2882-2889 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A computer-controlled rotating polarizer ellipsometer, operating in the infrared spectral region between 3.00 and 3.75 μm, has been developed for in situ characterization of amorphous hydrocarbon (a-C:H) thin films, deposited from methane in a rf plasma-enhanced chemical vapor deposition reactor. Spectroscopic IR ellipsometry permits insight into the chemical bonding structure of a-C:H coatings by the nondestructive detection of infrared stimulated C:H stretch vibrations. It is shown that the sp2CHx/sp3 CHx ratio, the content of bonded hydrogen, the infrared linewidth, and the real refractive index of the films depend on the negative self-bias voltage, which is formed at the samples during the deposition process. A transition from a-C:H films with polymerlike properties to hard a-C:H films was attained at a self-bias voltage of approximately −75 V.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7718-7727 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of C:H layers by an electron-cyclotron-resonance plasma from methane was investigated. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology, and structure were investigated by high-energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin-film deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH3, the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favorably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 971-973 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced fluorescence was applied at the B–X transition of the CH radical to measure absolute densities of the CH radicals in an electron cyclotron resonance methane plasma. The absolute experimental uncertainty is only about 30% due to a new calibration procedure. The CH density correlates well with optical emission from the CH A–X and B–X transitions over a wide pressure range. Experimental results are in satisfactory agreement with predictions from a model based on rate equations for the electron-induced dissociation and ionization of the parent methane gas. This model also includes the interaction of the plasma species with the surrounding walls and the particle transport due to pumping.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3401-3403 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A plasma-enhanced chemical vapor deposition process by means of the so-called running discharge has been developed. Amorphous hydrogenated carbon (C:H) films were deposited over a length of 2.5 m on the inner wall of an assembled waveguide system. The average deposition rate from a running discharge in methane was 0.27 A(ring)/s. An increase of the average deposition rate to 2.6 A(ring)/s was achieved using acetylene as process gas, while the H/C ratio in the C:H films remains nearly constant at one. The breakdown of a discharge in the metallic waveguide has been studied in argon plasmas depending on magnetic field, microwave power, and gas pressure. A sharp transition between a magnetically enhanced localized discharge and a running discharge was observed at increasing pressure in the range of some Pascal at a microwave power of 100 W. The running velocity (∼104 m/s) of the plasma package increases with increasing microwave power and increasing gas pressure. This plasma behavior has been further investigated by means of the power balance and plasma modeling in methane.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 163-168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard amorphous films of a-C:H and a-C:D were deposited by a rf glow discharge in either CH4 or CD4 . By ion bombardment with protons and deuterons, the H/D exchange process was studied as function of the bombardment fluence by means of depth profile measurements. The local hydrogen and deuterium contents are not adding up to a constant "saturation'' value: the local mixing model is not valid. Instead of that an initial depletion appears, which depends on the incident energy of the ions. At higher fluences, the total (H+D):C ratio tends to increase again, due to an increasing influence of the deposition process. This demonstrates a structural difference between a-C:H films and hydrogen-saturated layers of implanted carbon.
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Cell & tissue research 260 (1990), S. 337-348 
    ISSN: 1432-0878
    Keywords: Pineal organ ; Organ culture ; Pinealocytes ; Differentiation ; Melatonin ; Radioimmunoassay ; Chick embryo
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The development of sensory structures in the pineal organ of the chick was examined by means of scanning electron microscopy from embryonic day 10 through day 12 post-hatching. At embryonic day 10, the wall of the tubules within the pineal primordium is composed of cells with unspecialized luminal surface. Differentiation of sensory structures starts at embryonic day 12 when pinealocytes and supporting cells can be distinguished. Pinealocytes are recognized by virtue of an inner segment only rarely endowed with a cilium, whereas supporting cells exhibit numerous short microvilli. Further differentiation of the sensory apparatus is achieved by development of an oval-shaped, biconcave swelling at the tip of the cilium, 1×2 μm in size, and a collar of long microvilli at the base of the inner segment. Membrane specializations of sensory cilia, however, were not detected. Since during embryonic life new tubules and follicles are continuously formed, all stages of differentiation of sensory structures are found in the chick pineal organ during the second half of the incubation period and the first two weeks after hatching. In 200-μm-thick Vibratome sections of chick-embryo pineal organs cultured in medium BM 86 Wissler for periods up to 13 days the cytodifferentiation parallels the development in vivo. Using an organ-culture system the 24-h release of melatonin into the culture medium was measured by means of radioimmunoassay after solid-phase extraction. At embryonic day 10, the 24-h secretion of melatonin was at the lower range of detection of the RIA (5 pg). The rapid increase in 24-h secretion in melatonin until hatching (∼50 μg) is approximated by an exponential curve.
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  • 9
    Publication Date: 1994-09-01
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 10
    Publication Date: 1994-02-21
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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