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  • 1
    Electronic Resource
    Electronic Resource
    Observation of surface charge screening and Fermi level pinning on a synthetic, boron-doped diamond (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4015-4019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic current-voltage (I-V) curves taken with a scanning tunneling microscope on a synthetic, boron-doped diamond single crystal indicate that the diamond, boiled in acid and baked to 500 °C in vacuum, does not exhibit ideal Schottky characteristics. These I-V curves taken in ultrahigh vacuum do not fit the traditional theory of thermionic emission; however, the deviation from ideal can be accounted for by charge screening at the diamond surface. At ambient pressure, the I-V curves have a sharp threshold voltage at 1.7 eV above the valence band edge indicating pinning of the Fermi energy. This measurement is in excellent agreement with the 1/3 band gap rule of Mead and Spitzer [Phys. Rev. 134, A713 (1964)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354445
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of low-temperature annealing on the native oxide of AlxGa1−xAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3880-3885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the effects of low-temperature (∼540 °C) annealing, with and without an As overpressure, on the native oxide of AlxGa1−xAs formed via water vapor oxidation at elevated temperature (∼425 °C). Auger electron spectroscopy data show the Al to be oxidized while the Ga remains unoxidized after the water vapor oxidation of AlxGa1−xAs. Transmission electron microscopy data show a possible composition or phase change upon annealing with an As overpressure. Electron diffraction data indicate that the as-oxidized AlxGa1−xAs is a combination of four possible phases of Al2O3, η, γ, δ, χ, or AlO(OH). Supporting secondary-ion mass spectrometry data are also presented. Ellipsometer measurements indicate an index of refraction n=1.63 (λ=6328 A(ring)) for the native oxide. Ellipsometer measurements of the oxidized and annealed samples show the creation of a region 300–550 A(ring) thick at the oxide-semiconductor interface with n=2.78–2.93.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354482
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  • 3
    Electronic Resource
    Electronic Resource
    Coordinate-space formulation of polymer lattice cluster theory (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 9951-9962 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Freed et al. have recently developed a lattice cluster theory of polymer solutions that involves series expansions in momentum space. Here we reformulate the lattice cluster theory in coordinate space. The present treatment has certain useful features. In particular, the terms in the reformulated theory can be obtained readily from existing exhaustive computer enumerations. Also, the Flory–Huggins theory can be shown to arise as the first term in a recentered coordinate-space expansion. Generalization to treat polymers in confined space is straightforward.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464321
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  • 4
    Electronic Resource
    Electronic Resource
    Series operation of power MOSFETs for high-speed, high-voltage switching applications (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1655-1656 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144043
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  • 5
    Electronic Resource
    Electronic Resource
    Tensor product decompositions and branching rules of the N=2 superconformal algebra (1993)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 1076-1094 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Tensor product decompositions of the N=2 superconformal algebras are examined to determine when they are finite or multiplicity-free, using various combinatorial identities. Using similar techniques, branching rules for the winding subalgebras of the N=2 superconformal algebras are investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530239
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1248-1250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of unintentional hydrogen passivation of acceptors in heavily C-doped GaAs (p(approximately-greater-than)1018 cm−3) grown by metalorganic chemical vapor deposition has been found to be a strong function of post-growth cool-down ambient. The carbon concentration in the GaAs and the amount of AsH3 in the cool-down ambient are the most important factors affecting passivation. Carbon acceptors can be reactivated by annealing in N2, then repassivated by heating and re-cooling in an AsH3/H2 or PH3/H2 ambient. Secondary ion mass spectrometry analysis shows that the hydrogen concentration is significantly higher in a C-doped GaAs surface layer which is exposed to the cool-down ambient than in a layer which is buried beneath n-type GaAs. This result is consistent with observations in n-p-n heterojunction bipolar transistor structures, where the fraction of C acceptors passivated in the base region is found to be less than in a single layer grown under identical conditions. Be-doped GaAs grown by gas-source molecular beam epitaxy has also been heated and cooled in AsH3-containing ambients, but no acceptor passivation is detectable by Hall effect measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108748
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  • 7
    Electronic Resource
    Electronic Resource
    Phase locking of linear arrays of CO2 waveguide lasers by the waveguide-confined Talbot effect (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2591-2593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase locking of CO2 waveguide laser arrays of up to 19 channels has been attained by low-loss coupling in a slab waveguide of Talbot imaging dimensions, within a two-mirror cavity. The technique provides strong channel coupling while maintaining a low laser threshold. A seven channel array phase locked into a single mode by this technique has produced 100 W of output and 10% efficiency, demonstrating the effectiveness of Talbot imaging, when combined with confinement in a slab waveguide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110440
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