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  • 1
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary Polyaniline and polyalkylaniline perchlorates were prepared by oxidative coupling polymerization of anilines by the use of copper(II) perchlorate in acetonitrile as an oxidant. The corresponding polymer bases obtained by treating the perchlorates with alkaline solution were soluble in dimethylsulfoxide and partly soluble in tetrahydrofuran. The molecular weights of the THF-soluble components were 2000–6000. The charge transport of the perchlorates is influenced by the chain length and the steric effect of alkyl substituents.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4485-4489 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd3+-doped CaF2 monocrystalline films have been grown by molecular-beam epitaxy using CaF2 and NdF3 evaporation on CaF2 (100) substrates. Auger electron spectrometry and high-energy electron diffraction have been used as in situ techniques to characterize the grown layers. No degradation of crystallinity was observed even for the highest levels of doping considered. The effect of Nd3+ concentration is studied by means of the photoluminescence signal of Nd3+ ions. The results can be compared favorably with those of bulk CaF2:Nd crystals. For a given Nd3+ concentration a lower quantity of Nd3+ aggregate centers is observed. Nd3+ ions can, therefore, be efficiently incorporated in isolated Nd3+-F− centers up to concentrations of 3.7 wt % Nd3+ without emission quenching of the associated line at 1.0457 μm. The results are related to the thermodynamic conditions imposed by the molecular-beam epitaxy technique.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 404-408 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison is made on the dielectric properties of the ferroelectric perovskite bismuth titanate for both crystalline (along different directions) and polycrystalline (with and without flux) samples, using the complex ac impedance technique. Results for the impedance, conductivity activation energies, bulk dielectric constant, and temperature behavior of the low-frequency dielectric constant are presented. We discuss these results in terms of the conduction mechanisms depending on the nature of the sample, and compare results for crystalline and polycrystalline samples. Also, we show the important influence of the flux on the dielectric properties of the different samples, which must be taken into account in the use of these materials as substrates for the growth of superconducting thin-film ceramic oxides.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4064-4070 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy measurements have been performed on GaAs:Be samples with high crystalline quality and exceptional heavy doping level ranging from 1019 to 1.4×1021 cm−3. The recorded spectra show a structure we assigned to a coupled LO phonon-damped plasmon mode. A theoretical expression for the Raman scattering rate by this mode has been derived from a dielectric model and compared to the experimental data. Using a fitting procedure the doping level of the samples has been estimated in agreement with Hall measurements. Moreover, the study of the Raman intensity evolution of both unscreened-LO and coupled phonon-plasmon structures, provided a convenient and rapid method to determine the activated carrier density in p-doped polar semiconductors. Disorder effects due to the dopant impurities have been also observed and analyzed using a spatial correlation model description.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 735-737 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ionization processes of Se-related DX centers have been studied in AlGaAs Schottky diodes under high reverse bias conditions. A spectroscopy technique that provides directly the free-electron concentration has been used. Besides the well known thermal and optical electron emission processes, a new mechanism, attributed to an impact ionization process of DX centers, is described, and its kinetics is analyzed.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3511-3513 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd3+ incorporation in CaF2 layers grown by molecular-beam epitaxy on CaF2 substrates is investigated by making use of the photoluminescence lines associated with Nd3+ centers involving one or several Nd3+ ions. It is shown that the substrate crystal orientation has no effect on the aggregation state of Nd3+ while the growth temperature greatly influences the formation of Nd3+ aggregate centers. An optimum growth temperature around 500 °C is determined, leading to CaF2 layers of good crystal quality in which the main emission, related to single Nd3+ centers, is optimized. The results have been obtained for Nd3+ concentrations as high as 3.6 wt % Nd and growth rates in the range of 0.2–1 μm/h.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1764-1766 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress relaxation behavior at the start of molecular beam epitaxial growth of GaAs layers on Si (100) 2 ° off substrates was studied as a function of nucleation procedures. Two alternative methods were investigated: (i) the standard two-step technique in which growth is initiated at moderate temperature and growth rate, and (ii) a procedure in which a succession of amorphous thin GaAs layers are deposited and thermally crystallized at each step. The results obtained by in situ reflection high-energy electron diffraction analyses evidence a strong dependence of stress relaxation on the nucleation procedure used: in the first case, stress relaxation occurs abruptly at the start of nucleation although, in the second case, relaxation occurs progressively. These results are discussed in terms of the modes of growth involved.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 152-154 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of Nd3+-doped CaF2 monocrystalline layers on CaF2 substrates is demonstrated. Nd concentration is controlled by the temperature of an evaporation cell containing NdF3. Photoluminescence spectra of the samples show emissions from Nd3+ centers in tetragonal symmetry sites as a consequence of the charge compensation mechanism provided by interstitial F− ions.
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  • 9
    ISSN: 1572-8927
    Keywords: 1-Fluoroalkanes ; excess enthalpy ; DISQUAC group contribution model ; fluoroalkane-solvent interactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Molar excess enthalpies H E at 298.15 K and atmospheric pressure were determined for 12 binary liquid mixtures, 1-fluoropentane, 1-fluorohexane, or 1-fluorononane + a non-polar solvent (hexane, cyclohexane, benzene, or tetrachloromethane) and were interpreted by the DISQUAC group contribution model. 1-Fluoroalkane + n-alkane mixtures are characterized by two types of groups or contact surfaces, fluorine (F) and alkane (CH3, CH2), the remaining mixtures by the additional contact surfaces of the solvents (C6H12 C6H6, or CCl4). The interchange energies, entirely dispersive, of the alkane-solvent contacts were determined independently from the study of solvent-alkane mixtures. The dispersive F-alkane parameters were assumed to equal the parameters of perfluoroalkanes + n-alkanes. The shape of the H E curves of 1-fluorolkane + polarizable solvent (C6H6, CCl4) mixtures are best reproduced by the model when the quasi-chemical F-solvent parameters are assumed to equal zero. The quasi-chemical F-alkane (the same for n-alkanes and cyclohexane) and the dispersive F-solvent parameters were estimated in this work. The 1-fluoroalkane solutions in C6H6 or CCl4 exhibit the characteristic features of polar solute + polarizable solvent mixtures, viz., the deviations from the ideality are less positive than in alkanes and the experimental H E curves are strongly asymmetrical.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of theoretical probability 4 (1991), S. 371-389 
    ISSN: 1572-9230
    Keywords: Berezin integration ; large deviations ; Markov process
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract We apply a method invented by Luttinger to obtain an asymptotic expansion in powers of 1/T forE[e −TF(τ)]. τ is theproportion of local time andE is the expectation for a time-homogeneous Markov process withN states. The result extends the large-deviation result of Donsker and Varadhan by providing a complete expansion as opposed to only the leading term.
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