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  • American Institute of Physics (AIP)  (5)
  • 1990-1994  (5)
  • 1991  (5)
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Verlag/Herausgeber
Erscheinungszeitraum
  • 1990-1994  (5)
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Effect of (NH4)2Sx treatment on the passivation of GaP surface (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2877-2879 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We applied slow positrons to both as-etched GaP and (NH4)2Sx-treated GaP. The results show that the surface of as-etched GaP is active for the adsorption of oxygen atoms when the etched surface was exposed to air for several minutes before the measurement. On the other hand, the monolayer of chemisorbed sulfur in (NH4)2Sx-treated GaP is effective to protect the clean surface from the adsorption of the oxygen atoms. The mean diffusion length of positrons in the etched GaP is shorter than that in (NH4)2Sx-treated GaP. This suggests that the centers for the positron trapping, such as Ga vacancies VGa and/or VGa-related complexes, are created by the adsorption of oxygen atoms.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349354
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  • 2
    Digitale Medien
    Digitale Medien
    Impurity effects on both the creation and the migration of Ga vacancies in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 674-684 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of impurities, such as Si and Be, on both the creation and the migration of Ga vacancies in annealing of GaAs were investigated by a slow positron beam technique. The results show that vacancies diffuse from the surface during the annealing and one of the dominant types is a monovacancy of Ga, VGa, in Be-doped GaAs and/or Si-doped GaAs, while the other is a divacancy of VGa-VAs in undoped GaAs. In annealing the bilayer structures composed of the Si-doped layer grown on the Be-doped layer, it was found that VGa is a major type of defect rather than VGa-VAs if the Si concentration is higher or lower than the Be one in GaAs, but VGa-VAs is dominant if the concentrations of the impurities are similar. This proposes that the interaction between Si and Be is stronger than that of VAs-BeGa and/or VGa-SiGa. The Ga interstitial IGa is created in the Be-doped layer where IGa interacts with VGa created from the surface and suppresses the migration of VGa. This supports the validity of the kick-out mechanism involving a column-III interstitial rather than the Longini mechanism for Be diffusion in GaAs. In Si-doped GaAs, VGa is created from the surface and the diffusion constant of VGa decreases with the increase of Si doping concentration. This implies that VGa forms a complex of SiGa-VGa and the interaction time of VGa at the Si donor by making a complex of SiGa-VGa is a rate-limiting step in the diffusion of VGa in GaAs. The present results propose the creation of IGa and VGa in the Be-diffused GaAs and in Si-diffused GaAs, respectively. This is consistent with the Fermi-level effect of the impurities on the creation of those defects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349647
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  • 3
    Digitale Medien
    Digitale Medien
    Be diffusion mechanism in GaAs investigated by slow positron beam (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6364-6368 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The slow positron beam technique was applied on undoped and Be-doped GaAs to study the effects of Be impurities on both creation and migration of Ga vacancies, VGa, during annealing. It is observed that a monovacancy of VGa is created in Be-doped GaAs to result in enhanced Coulombic interaction between As vacancy, VAs, and Be acceptor, BeGa. In undoped GaAs, the formation of divacancies, VGa-VAs, is dominant. The migration depth of vacancies is shorter in Be-doped GaAs than in undoped GaAs. This suggests the existence of Ga interstitials, IGa, in the Be diffused layer which interact with VGa introduced from the surface. Based on these observations, we suggest the kick-out mechanism for Be diffusion in GaAs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348971
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  • 4
    Digitale Medien
    Digitale Medien
    Effects of impurities Si and Be on the creation of Ga vacancies and Ga interstitials in GaAs grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1524-1526 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two type of top layers, namely, undoped and Si-doped GaAs layers, were grown, respectively, on a Be-doped epilayer by molecular beam epitaxy, and the effects of impurities of Be and Si on the creation of Ga interstitials IGa and Ga vacancies VGa during the annealing of the specimens were investigated by a slow positron beam. The concentration of VGa created from the surface of the undoped GaAs during the annealing decreases drastically when the annealed GaAs was kept at room temperature for one month. This implies that the Be atoms diffusing to the undoped GaAs during the growth and/or the annealing cause the creation of IGa in the undoped layer and it makes the recombination with VGa. On the other hand, no decrease in the concentration of VGa was observed in the Si-doped GaAs. These support the creation of IGa and of VGa, respectively, in the Be-diffused GaAs and in Si-diffused GaAs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105166
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  • 5
    Digitale Medien
    Digitale Medien
    Evidence for the passivation effect in (NH4)2Sx-treated GaAs observed by slow positrons (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1167-1169 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We applied slow positrons to the as-etched GaAs and/or the (NH4)2Sx-treated GaAs. The results show that a thin oxide film is easily formed on the surface of as-etched GaAs as soon as the etched surface is exposed to air for several minutes before the measurement. On the other hand, the monolayer of chemisorbed sulfur atoms in the (NH4)2 Sx-treated GaAs is effective in protecting the clean surface from the adsorption of oxygen atoms. The mean diffusion length of positrons is not affected by the conditions of the surface treatment. This implies that the centers for the trapping of a positron are not created below the free surface by those treatments.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104353
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