Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1058-1060
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaN epilayers were grown on GaAs substrates by gas-source molecular-beam-epitaxy technique using dimethylhydrazine as a nitrogen source. It was found that cubic GaN grows on GaAs (001) surfaces epitaxially, while hexagonal GaN grows on GaAs (111) surfaces, from the analyses of x-ray diffraction and reflection high-energy electron diffraction patterns. Cathodoluminescence measurements suggested that the band-gap energy of cubic GaN is around 0.37 eV larger than that of hexagonal GaN.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106344
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