Publication Date:
2012-08-31
Description:
Author(s): Baisheng Sa, Jian Zhou, Zhimei Sun, Junji Tominaga, and Rajeev Ahuja GeTe/Sb 2 Te 3 superlattice phase-change memory devices demonstrated greatly improved performance over that of Ge 2 Sb 2 Te 5 , a prototype record media for phase-change random access memory. In this work, we show that this type of GeTe/Sb 2 Te 3 superlattice exhibits topological insulating behavior on the basi... [Phys. Rev. Lett. 109, 096802] Published Thu Aug 30, 2012
Keywords:
Condensed Matter: Electronic Properties, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
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