ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Ta-Al-N thin films on Si wafer were prepared by RF reactive magnetron sputtering in aN2/Ar ambient. Then the stacked structures of Cu/Ta-Al-N/Si were prepared and annealed attemperatures varied from 400°C to 900°C for 5 minutes in a N2 ambient tube. Four-point probe (FPP)sheet resistance measurement, Atomic force microscope (AFM), Scanning electronmicroscope(SEM), Alpha-Step IQ Profilers and X-ray Diffraction(XRD) were used to investigate thecomposition, morphology and the diffusion barrier properties of the thin films. The results show thatwith the increasing of Al component, the surface of Ta-Al-N thin-films became finer, the sheetresistance became higher, and after annealing at 800°C/300S FA, Cu diffusion through Ta-Al-Nbarrier didn’t not occurred. Results show that Ta-Al-N thin-films could act as diffusion barrier fornew generation integrated circuits due to its excellent high temperature properties
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.26-28.593.pdf
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