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  • 1
    Electronic Resource
    Electronic Resource
    Pathogenicity of Vibrio harveyi to salmonids (2000)
    Oxford, UK : Blackwell Science Ltd
    Journal of fish diseases 23 (2000), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Out of 19 Vibrio harveyi isolates obtained from a diversity of hosts and geographical locations, 14 were pathogenic to rainbow trout, Oncorhynchus mykiss (Walbaum), and Atlantic salmon, Salmo salar L., with mortalities of up to 100% following intraperitoneal injections of 106 cells fish−1. The extracellular products (ECPs) of only five pathogenic isolates were harmful to fish. Both pathogenic and non-pathogenic cultures produced ECPs containing caseinase, gelatinase, phospholipase, lipase and haemolysins. Vibrio harveyi VIB 645, which was the most pathogenic isolate, produced ECPs with a maximal effect on salmonids from preparations obtained by using cellophane overlays on tryptone soya agar supplemented with 1% (w/v) sodium chloride with incubation at 28 °C for 24 h. This preparation contained the highest titre of haemolytic activity to Atlantic salmon (1:256) and rainbow trout (1:32) erythrocytes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2761.2000.00214.x
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  • 2
    Electronic Resource
    Electronic Resource
    Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4917-4921 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed outgoing resonant Raman scattering and photoluminescence measurements on as-grown, Be- and C-implanted GaN in the temperature range of 77–330 K. In implanted GaN after postimplantation annealing at 1100 °C, the A1(LO) multiphonons up to the seventh order were observed with the very strong four longitudinal optical (LO) and five LO modes at ∼2955 and ∼3690 cm−1, respectively, showing extraordinary resonance behavior. With the sample temperature, these two modes significantly decreased and increased in intensity, respectively. The phenomenon is attributed to the variation of resonant conditions due to the shift of the band gap energy. Meanwhile, the combination of E2(high) and quasi-LO phonons was strongly enhanced by quasi-LO phonon involvement and thus the corresponding overtones can be clearly observed even up to the sixth order (m=6). The mechanisms that such strong outgoing multiphonon resonance Raman scattering occurred to implanted GaN instead of high-quality as-grown GaN samples can be attributed to the strong Frohlich-induced scattering by LO phonons and exciton-mediated resonant Raman scattering with impurity inducement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455682
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  • 3
    Electronic Resource
    Electronic Resource
    Solar-blind AlGaN photodiodes with very low cutoff wavelength (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 403-405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and characterization of AlxGa1−xN photodiodes (x∼0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The peak responsivity for −5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125768
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  • 4
    Electronic Resource
    Electronic Resource
    Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5−xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles pseudopotential method with virtual crystal approximation. The valence band offset, VBO, varies with x as VBO=0.433x eV, while the inferred conduction band offset CBO at Γ minimum (band-gap difference minus the valence band offset) varies in x as CBOΓ=0.787x eV. Our results are in good agreement with the experimental data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122096
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  • 5
    Electronic Resource
    Electronic Resource
    Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5852-5854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first-principles pseudopotential method combined with virtual crystal approximation is used to calculate band offsets at the In0.53(AlzGa1−z)0.47As/In0.52Al0.48As (001) heterostructures lattice matched to an InP substrate. It is found that the valence-band offset (VBO) varies with respect to the aluminum composition as VBO=0.18–0.16z–0.02z2 eV, while the conduction-band offset (CBO) varies as CBO=0.51–0.33z–0.18z2 eV. Our results are in good agreement with the experimental data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367443
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  • 6
    Electronic Resource
    Electronic Resource
    Functionally Graded Materials Under Severe Thermal Environments (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Thermal shock strengths of a plate of a functionally graded material (FGM) are analyzed when the plate is suddenly exposed to an environmental medium of different temperature. A finite element/mode superposition method is proposed to solve the time-dependent temperature field. The admissible temperature jump that the material can sustain is studied using the stress-based and fracture mechanics-based criteria. The critical parameters governing the level of the transient thermal stress in the medium are identified. The strength of FGMs under transient thermal stresses is analyzed using both maximum local tensile stress and maximum stress intensity factor criteria.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00126.x
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  • 7
    Electronic Resource
    Electronic Resource
    High-temperature isopiestic studies on {(1 - y)Hg + y(1 - t)Bi + ytSn}(I) at 600 K. Comparison with the partial ideal-solution model
    Amsterdam : Elsevier
    The @Journal of Chemical Thermodynamics 21 (1989), S. 653-665 
    Details
    ISSN: 0021-9614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0021-9614(89)90178-X
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  • 8
    Electronic Resource
    Electronic Resource
    High-temperature isopiestic studies on {(1-y)PbCl"2 + y(1-t)NaCl + ytBaCl"2}(l) at the temperature 873 K
    Amsterdam : Elsevier
    The @Journal of Chemical Thermodynamics 25 (1993), S. 711-717 
    Details
    ISSN: 0021-9614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/jcht.1993.1069
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  • 9
    Electronic Resource
    Electronic Resource
    Detection of Vibrio parahaemolyticus in Penaeus chinensis using an indirect fluorescent antibody staining procedure (1999)
    Springer
    World journal of microbiology and biotechnology 15 (1999), S. 325-328 
    Details
    ISSN: 1573-0972
    Keywords: Indirect fluorescent antibody staining ; Penaeus chinensis ; Vibrio parahaemolyticus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract An indirect fluorescent antibody technique (iFAT) incorporating fluorescein-isothiocyanate conjugated anti-rabbit globulin goat serum, and rhodamine-isothiocyanate conjugated bovine serum albumin as background stain has been developed for the detection of Vibrio parahaemolyticus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008849824453
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  • 10
    Electronic Resource
    Electronic Resource
    Interpretation of interbasin exchange in an isopycnal ocean model (1998)
    Springer
    Climate dynamics 14 (1998), S. 725-740 
    Details
    ISSN: 1432-0894
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract  This work concerns an analysis of inter-basin and inter-layer exchanges in the component ocean part of the coupled ECHAM4/OPYC3 general circulation model, aimed at documenting the simulation of North Atlantic Deep Water (NADW) and related thermohaline circulations in the Indian and Pacific Oceans. The modeled NADW is formed mainly in the Greenland– Iceland–Norwegian Seas through a composite effect of deep convection and downward cross-isopycnal transport. The modeled deep-layer outflow of NADW can reach 16 Sv near 30 °S in the South Atlantic, with the corresponding upper-layer return flow mainly coming from the “cold water path” through Drake Passage. Less than 4 Sv of the Agulhas “leakage” water contributes to the replacement of NADW along the “warm water path”. In the South Atlantic Ocean, the model shows that some intermediate isopycnal layers with potential densities ranging between 27.0 and 27.5 are the major water source that compensate the NADW return flow and enhance the Circumpolar Deep Water (CDW) flowing from the Atlantic into Indian Ocean. The modeled thermohaline circulations in the Indian and Pacific Oceans indicate that the Indian Ocean may play the major role in converting deep water into intermediate water. About 16 Sv of the CDW-originating deep water enters the Indian Ocean northward of 31 °S, of which more than 13 Sv “upwell” mainly near the continental boundaries of Africa, South Asia and Australia through inter-layer exchanges and return to the Antarctic Circumpolar Current (ACC) as intermediate-layer water. As a contrast, only 4 Sv of Pacific intermediate water is connected to “upwelling” flow southward across 31 °S while the magnitude of northward deep flow across 31 °S in the Pacific Ocean is significantly greater than that in the Indian Ocean. The model suggests that a large portion of the deep waters entering the Pacific Ocean (about 14 Sv) “upwells” continually into some upper layers through the thermocline, and becomes the source of the Indonesian throughflow. Uncertainties in these results may be related to the incomplete adjustment of the model’s isopycnal layers and the sensitivity of the Indonesian throughflow to the model’s geography and topography.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003820050251
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