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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 9994-10000 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dissociative adsorption of H2 on both perfect and imperfect Cu(100) surfaces is studied by using a mixed quantum-classical method. The six-dimensional potential energy surface (PES) is obtained via a simplified embedded-atom method (EAM). The effects of the surface vacancy and surface impurity (here a substitutional Ni atom is considered) on the dissociation of H2 are taken into account. The variation of activation barriers for H2 dissociation near a surface defect with different pathways and different molecular orientations is investigated. Dissociation probability Pd is computed as a function of incident translational energy Ei for different vibrational and rotational states. It is found that the presence of both vacancy and impurity atom Ni enhances the dissociation of hydrogen molecule on Cu(100) surface. Meanwhile, the general variation trend of Pd with the rotational quantum number J is unchanged, i.e., Pd first decreases and then increases as J is increased. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3868-3871 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear-muffin-tin-orbital method with the atomic-sphere approximation is used to study the electronic structures of Si1−xCx and Si1−x−yCxGey alloys. The dependence of minimum band gap Eg, electronic density of states, and valence-band width on alloy composition is investigated. All inequivalent atomic configurations for each given alloy composition are considered. It is found that the electronic structures of Si1−xCx and Si1−x−yCxGey show an unexpected variation of band gap versus the carbon concentration: For small to moderate concentrations of C in Si1−xCx and Si1−x−0.125CxGe0.125, the band gap decreases from that of pure Si. The lattice relaxation does not change such character of Eg. The peak positions in density of states shift downward as the carbon concentration in Si1−xCx and Si1−x−0.125CxGe0.125 increases; meanwhile, the valence band is monotonically widened. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 500-502 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy-band structures of superlattice ZnSe/GaAs(001) are calculated using the semiempirical tight binding method. The fundamental gap and effective mass are studied with the variation of layer thickenss. The appearance of core excitons related to impurities B, Al, and Ga is found to be possible in (ZnSe)5/(GaAs)5, qualitatively consistent with a Ga-bound exciton peak observed in a corresponding heterojunction experiment. It is proposed that interface states would exist at the conduction-band edge of this material.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 717-719 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The empirical tight-binding method is used to calculate the electronic structures of type II strained-layer semiconductor superlattices (Si)2n /(Si1−x Gex )2n (100) with n=1–10. The effects of lattice-constant variation on nearest neighbor interactions have been taken into account. The energy gaps and positions of the conduction-band minimum are obtained for various number of layers. The effects of band folding and band discontinuity on the gap of Si/Ge are analyzed. The 2DEG (two-dimensional electron gas) localized in the Si layer can be explained in terms of the change of ΔEc because of structural strain. The strained band agrees quite well with electroreflectance experiment and other calculations. Studies on interface states are also presented.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1599-1601 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic structures of strained monolayer superlattices (Si)1/(Si1−xGex)1 are calculated within the tight-binding scheme by taking into consideration the effect of stress on atomic interactions. Gap variations with composition and band offsets for different strain conditions are obtained. When Si(Ge) is grown on cubic Ge(Si) with stress to match the lattice constant of the substrates, the calculated nonmonotonic behavior of the superlattice Eg(x) curve can be attributed to a similar phenomenon of the bulk alloy under the same strain. The energy band of the monolayer Si/Ge shows the zinc blende symmetry with a Si-like feature. Starting with the virtual crystal approximation for the calculation of gap and density of states, it is found that further modification using coherent potential approximation is not very significant.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 165-167 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The geometry structures of strained (Si)n/(Ge)n (1≤n≤6) superlattices grown pseudomorphically on (001) oriented Si1−xGex (0≤x≤1) substrates are studied. The calculations indicate that with proper choice of the Ge composition factor x symmetrically strained superlattices can be approximately obtained, which might render the growth of a superlattice with larger thickness possible.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 200-202 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman shifts of Si nanocrystals versus size were studied theoretically by a bond polarizability model. Zero-dimensional spheres and one-dimensional columns were considered. The relation between the Raman shift and the size for Si spheres and columns was established, from which the size of Si nanocrystals can be obtained for a given Raman shift or vice versa. © 1996 American Institute of Physics.
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  • 8
    Publication Date: 2019-03-20
    Description: Human gastric pathogenHelicobacter pylori(H. pylori) is the primary risk factor for gastric cancer and is one of the most prevalent carcinogenic infectious agents. Vacuolating cytotoxin A (VacA) is a key virulence factor secreted byH. pyloriand induces multiple cellular responses. Although structural and functional studies of VacA have been extensively performed, the high-resolution structure of a full-length VacA protomer and the molecular basis of its oligomerization are still unknown. Here, we use cryoelectron microscopy to resolve 10 structures of VacA assemblies, including monolayer (hexamer and heptamer) and bilayer (dodecamer, tridecamer, and tetradecamer) oligomers. The models of the 88-kDa full-length VacA protomer derived from the near-atomic resolution maps are highly conserved among different oligomers and show a continuous right-handed β-helix made up of two domains with extensive domain–domain interactions. The specific interactions between adjacent protomers in the same layer stabilizing the oligomers are well resolved. For double-layer oligomers, we found short- and/or long-range hydrophobic interactions between protomers across the two layers. Our structures and other previous observations lead to a mechanistic model wherein VacA hexamer would correspond to the prepore-forming state, and the N-terminal region of VacA responsible for the membrane insertion would undergo a large conformational change to bring the hydrophobic transmembrane region to the center of the oligomer for the membrane channel formation.
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 9
    Publication Date: 2020-03-13
    Description: Prokaryotes and viruses have fought a long battle against each other. Prokaryotes use CRISPR–Cas-mediated adaptive immunity, while conversely, viruses evolve multiple anti-CRISPR (Acr) proteins to defeat these CRISPR–Cas systems. The type I-F CRISPR–Cas system in Pseudomonas aeruginosa requires the crRNA-guided surveillance complex (Csy complex) to recognize the invading DNA. Although some Acr proteins against the Csy complex have been reported, other relevant Acr proteins still need studies to understand their mechanisms. Here, we obtain three structures of previously unresolved Acr proteins (AcrF9, AcrF8, and AcrF6) bound to the Csy complex using electron cryo-microscopy (cryo-EM), with resolution at 2.57 Å, 3.42 Å, and 3.15 Å, respectively. The 2.57-Å structure reveals fine details for each molecular component within the Csy complex as well as the direct and water-mediated interactions between proteins and CRISPR RNA (crRNA). Our structures also show unambiguously how these Acr proteins bind differently to the Csy complex. AcrF9 binds to key DNA-binding sites on the Csy spiral backbone. AcrF6 binds at the junction between Cas7.6f and Cas8f, which is critical for DNA duplex splitting. AcrF8 binds to a distinct position on the Csy spiral backbone and forms interactions with crRNA, which has not been seen in other Acr proteins against the Csy complex. Our structure-guided mutagenesis and biochemistry experiments further support the anti-CRISPR mechanisms of these Acr proteins. Our findings support the convergent consequence of inhibiting degradation of invading DNA by these Acr proteins, albeit with different modes of interactions with the type I-F CRISPR–Cas system.
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 10
    Publication Date: 1998-07-01
    Print ISSN: 0163-1829
    Electronic ISSN: 1095-3795
    Topics: Physics
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