ISSN:
1432-1858
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Technology
Notes:
Abstract In this work first commercially available SiC-transistor prototypes were tested with regard to their applicability in high temperature electronic circuits for sensor signal conditioning. The influence of the temperature on the device behaviour (drain-saturation current, gate leakage current, I–V-characteristics, long-term effects) was investigated. The devices showed reliable operation up to 450 °C. The maximum forward transconductance g m and the short circuit drain source current I DSS decreased to approximately 30% of the room temperature values. Also, a slight increase of the pinch-off voltage V p was observed. The gate leakage current I GSS rose with temperature, staying below 1 μA at 450 °C. A pre-ageing study was carried out to verify changes in the device characteristics with time. The devices were exposed to a 270 °C environment and it was observed that the DC parameters tend to stabilise after about 100 h. From the I–V-characteristics the SPICE parameters were extracted for a series of temperatures, allowing the design and optimisation of amplifier gain stages. The SPICE device simulation results are in good agreement with the measured characteristics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s005420050070
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