Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 121-123 (Mar. 2007), p. 1073-1076
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, Weinvestigate the growth conditions which are important to form semiconductor quantum dot (QD) inmolecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization ofthe atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain tothe epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.1073.pdf
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