Publication Date:
2018-09-21
Description:
Author(s): Yosuke Satake, Junichi Shiogai, Kohei Fujiwara, and Atsushi Tsukazaki Formation of a depletion region at the vertically stacked topological insulator p − n heterostructures is one of the effective approaches to minimize residual carrier density in the bulk regions. Here, we report on characterization of field-effect transistor (FET) based on ( B i 0.26 S b 0.74 ) 2 S e 3 / B i 2 S e 3 to... [Phys. Rev. B 98, 125415] Published Thu Sep 20, 2018
Keywords:
Surface physics, nanoscale physics, low-dimensional systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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