ISSN:
0001-1541
Schlagwort(e):
Chemistry
;
Chemical Engineering
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Chemie und Pharmazie
,
Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
Notizen:
Experimental data on silicon nitride film growth have been obtained from a radial-flow, plasma-enhanced chemical vapor deposition reactor. A nonisothermal mathematical model has been developed consisting of Navier-Stokes, energy, and species balance equations taking into account the temperature dependence of physical properties. The model is predictive at various power input levels for film compositions and growth rates.
Zusätzliches Material:
8 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/aic.690350613
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