Publication Date:
2017-01-28
Description:
Author(s): Zhen Fan, Hua Fan, Zengxing Lu, Peilian Li, Zhifeng Huang, Guo Tian, Lin Yang, Junxiang Yao, Chao Chen, Deyang Chen, Zhibo Yan, Xubing Lu, Xingsen Gao, and Jun-Ming Liu Ferroelectric diodes are promising for fast, low-power nonvolatile memory, but a major roadblock to this technology is a lack of reliability and reproducibility, the origins of which remain poorly understood. Through experiment and modeling, the authors show that the electroresistance ratio, resistive-switching polarity, and high- and low-resistance states all can be significantly affected by interfacial charge injection and trapping in such a device. This work carries important implications for the development of reliable resistive-switching memory. [Phys. Rev. Applied 7, 014020] Published Fri Jan 27, 2017
Electronic ISSN:
2331-7019
Topics:
Physics
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