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  • 1
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    Intelligent Electronic Devices (2021)
    MDPI - Multidisciplinary Digital Publishing Institute
    Details
    Publication Date: 2024-04-11
    Description: In a modern technological society, electronic engineering and design innovations are both academic and practical engineering fields that involve systematic technological materialization through scientific principles and engineering designs. Engineers and designers must work together with a variety of other professionals in their quest to find systems solutions to complex problems. Rapid advances in science and technology have broadened the horizons of engineering while simultaneously creating a multitude of challenging problems in every aspect of modern life. Current research is interdisciplinary in nature, reflecting a combination of concepts and methods that often span several areas of mechanics, mathematics, electrical engineering, control engineering, and other scientific disciplines. In addition, the 2nd IEEE International Conference on Knowledge Innovation and Invention 2019 (IEEE ICKII 2019) was held in Seoul, South Korea, on 12–15 July, 2019. This book, “Intelligent Electronic Devices”, includes 13 excellent papers form 260 papers presented in this conference about intelligent electronic devices. The main goals of this book were to encourage scientists to publish their experimental and theoretical results in as much detail as possible and to provide new scientific knowledge relevant to the topics of electronics.
    Keywords: TA1-2040 ; T1-995 ; wearable robot ; electrical circuits and devices ; threshold voltage ; broadcast circuit ; dual-input converter ; built-in self-test ; n-channel lateral diffused MOSFET (nLDMOS) ; multi-robots ; current-voltage characteristics ; actuator ; electromagnetic interference ; sound recognition module ; brushless DC motor ; tabu search ; transmission-line pulse system (TLP system) ; skeletal feature representation ; communications and information processing ; 180-degree conduction ; mosquitoes ; regions with convolutional neural network (R-CNN) ; oscillator ; secondary freeform lens device (SFLD) ; low-dosed ; ZnO-based nanowires ; adaptive network-based fuzzy inference system (ANFIS) ; galvanic isolation ; lateral diffusion MOS (LDMOS) ; non-uniform conduction ; photoluminescence properties ; Aedes albopictus ; test pattern generation ; stearic ; high-definition multimedia interface ; sensorless motor drive ; PCB layout ; leakage energy recycling ; latchup (LU) ; Aedes aegypti ; secondary breakdown current (It2) ; 6-DOF robot arm ; lower limb exoskeleton ; as low as diagnostically acceptable (ALADA) ; voltage-controlled oscillator ; Eu3+ and In3+ ions ; electromagnetic lock ; computer science and engineering ; holding voltage (Vh) ; low cost ; voltage clamping ; cone-beam computerized tomography (CBCT) ; selective anatomy analytic iteration reconstruction (SA2IR) ; action quality assessment ; diagnostic ability ; high voltage gain ; laser pointer ; sparse projections ; speed control ; multiple simple current mirror ; human activity analysis ; path programming ; negative differential resistance ; drift region ; electrostatic discharge (ESD) ; radiation resistance ; hydrothermal method ; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
    Language: English
    Format: application/octet-stream
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    E-BOOK
  • 2
    Electronic Resource
    Electronic Resource
    Sintering and Dielectric Properties of Excess Bi〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 Doped BaBi〈sub〉2〈/sub〉Nb〈sub〉2〈/sub〉O〈sub〉9〈/sub〉 Ceramics (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 336-338 (Apr. 2007), p. 188-191 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this study, ferroelectric materials with Bi-layered structure BaBi2Nb2O9 with excess xwt% Bi2O3 (x=0, 1.5, and 3) are investigated as the main compositions, and the sintering is proceededfrom 1000oC~1100oC. The effect of Bi2O3 on the morphologies, crystal structure, and dielectriccharacteristics of BaBi2Nb2O9 ceramics is developed with the aid of SEM, X-ray diffraction, anddielectric-temperature curves. Dielectric properties are investigated in the temperature of 25oC~465oC at frequency 10KHz~1MHz. It is found that sintering temperature and Bi2O3 content has noapparent influence on the Curie temperatures, but they have large influence on the maximumdielectric constants
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.188.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Sintering AlN Ceramics Below 1500°C with MgO-CaO-Al〈sub〉2〈/sub〉O〈sub〉3〈/sub〉-SiO〈sub〉2〈/sub〉 Glass Addition (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 336-338 (Apr. 2007), p. 1868-1871 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 5~15 wt% MgO-CaO-Al2O3-SiO2 (MCAS, fabricated by sol-gel method) glass is used asthe sintering aid of AlN ceramics. The sintering is proceeded from 1350oC~1550oC, scanning electronmicroscope is used to observe the sintered morphologies and X-ray diffraction pattern are used toconfirm the crystal structures. From the SEM observations, as 10wt% and 15wt% MCAS is added,AlN ceramics can be densified at 1500oC and 1450oC, which are much lower than the before studieswere. From the X-ray diffraction patterns, the crystal phases of MCAS-AlN ceramics are AlN, Al2O3,and cordierite phases. In this study, the dielectric characteristics of MCAS-AlN ceramics are alsodeveloped as a function of MCAS content and sintering temperature
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.1868.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Layered SrBi〈sub〉2〈/sub〉Ta〈sub〉2-x〈/sub〉V〈sub〉x〈/sub〉O〈sub〉9〈/sub〉 Ceramics (0.1 ≦ x ≦ 0.4) (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 336-338 (Apr. 2007), p. 192-195 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.192.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    The Influence of Thin Film Thickness on the Characteristics of Bismuth Titanate Oxide (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 336-338 (Apr. 2007), p. 129-132 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Bi4Ti3O12thin films were deposited on Pt/Ti/Si(p-100) substrate by RF magnetronsputtering at room temperature, and crystallized in a RTA furnace at temperature of 675°C for 10minutes. SIMS analysis identifies that bismuth content in the Bi4Ti3O12 thin film reduced slightlyfrom the surface into a depth of approximately 200 nm. XRD patterns revealed (117) phase wasdominated regardless the film thickness, and the intensity of the other peaks increased with theincrease of film thickness. (200) peak became dominant when the thickness of films were greater than680 nm. SEM observation showed that the grains were stripe plate-like, and the grain size increasedwith the increase of film thickness. Dielectric constant increased with the increase of film thickness,and kept around a certain value with the thickness ranging from 300 to 640 nm, then it rose again asthe film thickness above 680 nm. The leakage current and electrical breakdown also stronglydepended on the film thickness
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.129.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Low Temperature Sintering (Ba〈sub〉1-x〈/sub〉Sr〈sub〉x〈/sub〉)TiO〈sub〉3〈/sub〉 Ceramics by Using CuO-TiO〈sub〉2〈/sub〉 Mixture as Sintering Aid (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 336-338 (Apr. 2007), p. 62-65 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 1wt% CuO-TiO2 (molar ratio, CuO/TiO2= 1) mixture is added as the liquid phase sinteringaid to develop the sintering and dielectric characteristics of (Ba1-xSrx)TiO3 (x=0, 0.1, and 0.2)ceramics. The crystal characteristics of calcined (Ba1-xSrx)TiO3 powders and sintered (Ba1-xSrx)TiO3ceramics are developed by using X-ray diffraction method. The calcined (Ba1-xSrx)TiO3 powders and1050oC-sintered (Ba1-xSrx)TiO3 ceramics reveal a tetragonal or pseudo-cubic structure and the1150oC-sintered(Ba1-xSrx)TiO3 ceramics reveal a tetragonal structure. Sintered at 1100oC, the(Ba1-xSrx)TiO3 ceramics present a porous structure; Sintered at 1150oC, the (Ba1-xSrx)TiO3 ceramicspresent a uniform growth. The grain size decreases with the increase of SrO content. In this study, thedielectric characteristics of CuO-TiO2 mixture-fluxed (Ba1-xSrx)TiO3 ceramics are also developed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.62.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of sintering and annealing temperature on grain boundary barrier layer capacitors in a modified reduction-reoxidation method (1992)
    Springer
    Journal of materials science 3 (1992), S. 272-277 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract To produce grain boundary barrier layer capacitors with a simpler fabrication process and more-stable dielectric characteristics, a modified reduction-reoxidation method was developed. Nb2O5-doped (Ba0.8 Sr0.2)(Ti0.9 Zr0.1)O3 (BSTZ) was calcined at 1170 °C for complete formation of ABO3 phases. After calcination CuO was added to BSTZ as a liquid-phase promoter and insulating boundary layer material. The ceramics were sintered in a reducing atmosphere, and then the fired samples were annealed in air to reoxidize the reduced CuO to form insulating layers. The dielectric constant of the fabricated capacitors was decreased for higher annealing temperature, longer annealing time and smaller grain size. The loss tangent of the fabricated capacitors was increased for BSTZ with more CuO added, and was almost unchanged with annealing temperature, annealing time and grain size because of the existence of an insulating boundary layer material (CuO).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00703040
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of CuO–BaO mixture content on the grain growth of BaTiO3 (1998)
    Springer
    Journal of materials science 9 (1998), S. 167-172 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The present work has been aimed at studying the effect of processing variables such as amount of additions, sintering temperature, and duration on the density, microstructure, and grain growth of BaTiO3/CuO–BaO ceramics. Grain growth of BaTiO3 during liquid-phase sintering is investigated for CuO–BaO (mole ratio, CuO/BaO=2.5) mixture additions from 0.5 wt% to 2 wt%. Sintering in air for 1 to 16 h at 950 °C to 1250 °C is studied. BaTiO3 with 0.5 wt%, 1 wt%, 1.5 wt%, and 2 wt% CuO–BaO mixture additions, the average grain growth exponents are 5.3, 4.3, 5.9, and 9.2 and the activation energies are 605±60, 348±19, 650±50, and 810±110 kJ mol-1, respectively. For all compositions, the grain growth exponents decrease with increasing sintering temperature. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008873825532
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  • 9
    Electronic Resource
    Electronic Resource
    Sintering and Microwave Dielectric Characteristics of ZnTa〈sub〉2-x〈/sub〉xNb〈sub〉x〈/sub〉O〈sub〉6〈/sub〉 Ceramics (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 368-372 (Feb. 2008), p. 163-166 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The effects of Nb2O5 content upon the microwave characteristics of ZnTa2−xNbxO6 ceramicsare investigated. The appropriate sintering temperatures of ZnTa2−xNbxO6 ceramics slightly decrease withthe increase of Nb2O5 content, and the densities and dielectric constants of ZnTa2−xNbxO6 ceramicslinearly decrease with the increase of Nb2O5 content. As the Nb2O5 content increases, the Q×f value ofZnTa2−xNbxO6 ceramic first decreases, reaches a minimum value at x=1.0, then increases and reaches amaximum value at x=2.0. The τf values of ZnTa2−xNbxO6 ceramics are positive for x≤0.3, and change tonegative ones as x≥0.6
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.163.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of Excess Bi〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 on the Characteristics of (Na〈sub〉0.5〈/sub〉Bi〈sub〉0.5〈/sub〉)TiO〈sub〉3〈/sub〉-BaTiO〈sub〉3〈/sub〉 Ceramics (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 368-372 (Feb. 2008), p. 65-68 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this study, piezoelectric materials 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 (NBT-BT)composition with excess x wt% Bi2O3 (x=0, 1, 2, and 3) are investigated as a function of sinteringtemperatures. The sintering characteristics and dielectric characteristics of excess Bi2O3-doped 0.95(Na0.5Bi0.5)TiO3- 0.05 BaTiO3 ceramics are developed with the aid of SEM, XRD patterns, anddielectric-temperature curves. The sintering process is carried out in air for 2h from 1120oC to1200oC. Dielectric-temperature properties are investigated in the temperature range of 30oC~350oC atthe frequencies of 10KHz~1MHz. The maximum dielectric constants of NBT-BT ceramics firstincrease with the increase of Bi2O3 content, reach the maximum at 1wt%- Bi2O3-added NBT-BTceramics, and then decrease with the further increase of Bi2O3 content. The maximum dielectricconstants of NBT-BT ceramics are almost unchanged as the measured frequency increases. The Curietemperatures of NBT-BT ceramics are also developed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.65.pdf
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