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  • 1
    Electronic Resource
    Electronic Resource
    Desulfurization Performance with ZnO Nanocrystalline to Eliminate H〈sub〉2〈/sub〉S at Room Temperature (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 1325-1328 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Nanocrystalline ZnO powders, whose crystalline sizes were 14.3, 21.2,24.1, and 35.3 nm, respectively, were prepared by homogeneous precipitation process.Nanocrystalline ZnO powders were characterized with powder X-ray diffractometer(XRD), transmission electron microscopy (TEM) and X ray photoelectronspectroscopy (XPS). The performance of desulfurization of H2S at room temperaturewas investigated. Results demonstrated that the smaller the size of nanocrystallineZnO, the darker the color of desulfurization products would be, which was moresimilar to the characteristics of multi-sulfide results, indicating that the mechanism ofdesulfurization of nanocrystalline ZnO was not the same as that of the analytical pureZnO. Nanocrystalline ZnO improved the performance of desulfurization of H2S atroom temperature, and the activity time of nanocrystalline ZnO (14.3 nm) for thedesulfurization was 34 times that of analytical pure ZnO at absence of oxygen. Whenthe oxygen was present in reaction, the accuracy of desulfurization was improved, inwhich H2S was prone to be oxidized into element S, and SO2 was not detected atoutlet of the reactor
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.1325.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Transcriptional initiation sites in sorghum mitochondrial DNA indicate conserved and variable features (1997)
    Springer
    Current genetics 32 (1997), S. 287-295 
    Details
    ISSN: 1432-0983
    Keywords: Key words Sorghum ; Mitochondria ; Transcription promoters
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Transcriptional initiation and processing was examined for three sorghum mitochondrial DNA genes (atp6-1, atp6-2, urf209) and two open reading frames (orf265/130, orf107) to characterize sequences associated with initiation and other transcriptional strategies for this species. The 5′ termini of ten transcripts were determined by primer extension, and mtRNA was capped with guanylyl transferase and annealed to anti-sense riboprobes to identify transcriptional initiation regions. Eight transcript termini were suitable substrates for guanylyl transferase, indicating the presence of one (atp6-1, atp6-2, urf209), two (orf265/130), or three (orf107) promoters for the five examples. The majority of the putative promoters were associated with single primer-extension termini, while two examples exhibited two transcript-initiation sites within the promoter. Four examples were characterized by initiated transcripts without subsequent processing, indicating that processing is not obligatory. Each of the putative promoter regions included significant A/T-rich 5′ regions, consistent with previous examples, but four exceptions to a consensus core YRTA sequence were identified. The anomalies (AATA, CTTA) suggest plasticity in the primary structure of the core region of higher-plant mitochondrial DNA promoters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002940050279
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  • 3
    Electronic Resource
    Electronic Resource
    Doping in metal chalcogenide glasses (1998)
    Springer
    Semiconductors 32 (1998), S. 879-883 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Chalcogenide glasses that contain sufficient concentrations of metal atoms can be p-type doped. This doping results in part because the local structural order is tetrahedral at the metal and the chalcogen sites in these glasses. At concentrations exceeding 1019 cm−3, oxygen promotes doping by increasing the densities of dangling-bond defects at threefold-coordinated chalcogens, which are the doping sites in these glasses. For oxygen concentrations below 1019 cm−3, the conductivity is independent of oxygen, and therefore is controlled by other mechanisms. The compositions Cu6As4S9 and Cu6As4Se9 are studied, because at these compositions the S (or Se) and Cu atoms are all tetrahedrally coordinated and there exist only Cu-S and As-S (or Cu-Se and As-Se) bonds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187476
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of alkanolamines by ion-pair chromatography with chemiluminescence detection
    Amsterdam : Elsevier
    Analytica Chimica Acta 246 (1991), S. 447-450 
    Details
    ISSN: 0003-2670
    Keywords: Alkanolamines ; Chemiluminescence ; Chromatography ; Ethanolamines ; Liquid chromatography
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0003-2670(00)80985-X
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of cobalt(II), copper(II) and iron(II) by ion chromatography with chemiluminescence detection
    Amsterdam : Elsevier
    Analytica Chimica Acta 236 (1990), S. 287-292 
    Details
    ISSN: 0003-2670
    Keywords: Cobalt ; Copper ; Iron
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0003-2670(00)83324-3
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  • 6
    Electronic Resource
    Electronic Resource
    Procedures for the enhancement of selectivity in liquid phase chemiluminescence detection
    Amsterdam : Elsevier
    Analytica Chimica Acta 250 (1991), S. 145-155 
    Details
    ISSN: 0003-2670
    Keywords: Carboxylic acids ; Chemiluminescence ; Luminol ; Peroxyoxalate ; Polyaromatic hydrocarbons
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0003-2670(91)85068-4
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  • 7
    Electronic Resource
    Electronic Resource
    Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5351-5356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole-initiated avalanche multiplication is investigated using an AlGaAs/InGaAs p-n-p heterojunction bipolar transistor (HBT). Both experimental measurements and theoretical calculation are used to determine the avalanche multiplication factor. A large departure is observed at low electric field when comparison is made between the measured data and theoretical results obtained from the standard ionization model. The comparison shows that the conventional impact ionization model, based on local electric field, substantially overestimates the hole avalanche multiplication factor Mp−1 in the AlGaAs/InGaAs p-n-p HBT, where a significant dead space effect occurs in the collector space-charge region. A simple correction model for the dead space is proposed, that allows the multiplication to be accurately predicted, even in a heavily doped structure. Based on this model, multiplication characteristics for different threshold energy of the hole are calculated. A threshold energy of 2.5 eV was determined to be suitable for describing the hole-initiated impact ionization process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412836
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  • 8
    Electronic Resource
    Electronic Resource
    EVOLUTIONARY SIGNIFICANCE OF LOCAL GENETIC DIFFERENTIATION IN PLANTS (1996)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Ecology, Evolution, and Systematics 27 (1996), S. 237-277 
    Details
    ISSN: 0066-4162
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Notes: Abstract The study of natural plant populations has provided some of the strongest and most convincing cases of the operation of natural selection currently known, partly because of amenability to reciprocal transplant experiments, common garden work, and long-term in situ manipulation. Genetic differentiation among plant populations over small scales (a few cm to a few hundred cm) has been documented and is reviewed here, in herbaceous annuals and perennials, woody perennials, aquatics, terrestrials, narrow endemics, and widely distributed species. Character differentiation has been documented for most important features of plant structure and function. Examples are known for seed characters, leaf traits, phenology, physiological and biochemical activities, heavy metal tolerance, herbicide resistance, parasite resistance, competitive ability, organellar characters, breeding systems, and life history. Among the forces that have shaped these patterns of differentiation are toxic soils, fertilizers, mowing and grazing, soil moisture, temperature, light intensity, pollinating vectors, parasitism, gene flow, and natural dynamics. The breadth and depth of the evidence reviewed here strongly support the idea that natural selection is the principal force shaping genetic architecture in natural plant populations; that view needs to be more widely appreciated than it is at present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ecolsys.27.1.237
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  • 9
    Electronic Resource
    Electronic Resource
    Experimental study of forward current transients in amorphous silicon p-i-n structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2338-2340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The delay time of forward current onset from initial electron space-charge-limited current to recombination-limited current in a-Si:H p-i-n devices was studied as a function of bias voltage, temperature and illumination intensity. The results show that the delay time and the initial electron current are related by a power law, td∝I−γSCLC, where γ is a temperature-independent constant. The value of γ is sensitive to the device properties such as the thickness of the intrinsic layer and the density of states. For a good quality device with 3.74 μm intrinsic layer, γ=0.70±0.05, while for a thin one deposited in the same conditions, γ changes to 0.99±0.05. A physical interpretation is presented. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112737
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  • 10
    Electronic Resource
    Electronic Resource
    Study of band-gap narrowing effect and nonradiative recombination centers for heavily C-doped GaAs by photoluminescence spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4822-4824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band-gap narrowing effect of GaAs as a function of carbon doping concentration has been measured using photoluminescence (PL) spectroscopy on samples grown by metalorganic chemical-vapor deposition. The range of carbon concentration varies from 3.4×1018 to 1.1×1020 cm−3. The experimental results obtained from PL spectra taking tailing effects into account are in good agreement with recent theoretical calculations. The intensity of PL spectra decreases rapidly when the free-carrier concentration is higher than about 4×1019 cm−3. This phenomenon cannot be explained with only the varying tendency of the minority-electron lifetime of the radiative recombination process, indicating the introduction of additional nonradiative recombination centers in heavily C-doped GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359406
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