ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is lower than 1000 oC, was chosen because the 2H-SiC polytype is more stable at lower temperatures than other polytypes such as 3C-, 4H-, and 6H-SiC. Many hexagonal-shaped crystals of approximately 100 m in diameter were observed via a scanning electron microscope (SEM). A high resolution transmission electron microscope (HR-TEM) lattice image of the grown crystals showed a periodical structure with A-B stacking along the 〈0001〉 direction. These results indicated that the Li-based flux was useful for growing bulk 2H-SiC single crystals
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.55.pdf
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