Publication Date:
2018-08-04
Description:
Author(s): Tatsuya Yamamoto, Takayuki Nozaki, Yoichi Shiota, Hiroshi Imamura, Shingo Tamaru, Kay Yakushiji, Hitoshi Kubota, Akio Fukushima, Yoshishige Suzuki, and Shinji Yuasa Dynamic switching of magnetization driven by subnanosecond voltage pulses would be a central technology for realizing ultralow-power magnetic random-access memory. For practical applications, however, there is a strong demand to reduce the write-error rate. This study shows that transitions of magnetization between different precession orbits, as induced by thermal fluctuations, play a dominant role in the probability of write error. The transitions can be avoided by choosing a proper width for the write voltage pulse. These findings will promote the development of voltage-driven spintronic devices. [Phys. Rev. Applied 10, 024004] Published Fri Aug 03, 2018
Electronic ISSN:
2331-7019
Topics:
Physics
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