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  • 1
    Electronic Resource
    Electronic Resource
    Subband effective mass and mobility of two-dimensional electrons in uniformly Si-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 569-574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subband effective mass and mobility of a two-dimensional electron gas in uniformly Si-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells are estimated. In three samples with well widths of 130, 200, and 300 A(ring) and a fixed barrier width of 68 A(ring), up to three two-dimensional subbands are found. Maximum enhancement of electron effective mass is 25% over the bulk value at a Fermi energy of 108 meV. These estimated effective masses are slightly smaller than previously reported values, and this is explained by recent theories which assume only nonparabolic correction. When the temperature ratio, (Dingle temperature)/(mobility temperature), is assumed to be identical in different subbands in each sample, the electron mobility of the first excited subband is at most twice that of the ground subband in the sample with the widest well. The effects of intersubband scattering and of screening on the subband mobilities are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352333
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  • 2
    Electronic Resource
    Electronic Resource
    Small mesas and holes in split-gate quantum wires acting as "artificial impurities'' fabricated with scanning tunneling microscope (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8391-8396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article discusses fabrication of "artificial impurities'' such as small mesas and holes with a scanning tunneling microscope (STM) in split-gate quantum wires and their transport properties. In order to make and properly place these small structures on the wire surface, we employed a combined STM/scanning electron microscope system operated in vacuum. The fabrication method involves simple electrical evaporation with a Tungsten tip. In a wire having a small mesa (70 nm diameter and 15 nm height) at the center, clear Coulomb blockades and staircases corresponding to the size of the mesa were observed at 0.3 K. In a wire with a hole (200–300 nm upper diameter and 100–150 nm depth) near the gate electrode, both quantized plateaus and damage-induced telegraphic switching were observed in the two-terminal conductance also at 0.3 K. This means that a deep hole at the wire edge can behave, depending on the evaporation condition, either as a simple constriction or as a constriction with electron traps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362559
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  • 3
    Electronic Resource
    Electronic Resource
    Identification of acceptors and donors in high-purity InP grown by metalorganic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1059-1062 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence at 1.9 K and far-infrared photoconductivity at 4.2 K reveal that Si and S are the predominant residual donors and Zn is the predominant acceptor in high-purity epitaxial InP grown by metalorganic chemical vapor deposition using triethylindium at temperatures from 575 to 700 °C. The epitaxial layers show 77 K electron Hall mobilities exceeding 100 000 cm2/V⋅s. Si accumulation near the epitaxial layer/substrate interface is revealed by far-infrared photoconductivity measurements. Although no residual C acceptor is observed in any samples, an unidentified acceptor called A1 is observed in samples grown at 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338198
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  • 4
    Electronic Resource
    Electronic Resource
    Electron mobility and compensation ratios in high-purity n-type InP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2412-2415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical and experimental studies of electron mobility and compensation ratio in n-type InP are reported. From far-infrared magnetoabsorption measurements, compensation ratios of nine epitaxial samples are determined experimentally. Electron mobility is calculated by considering all essential scattering processes and by taking into account the compensation effect. By comparing the theoretical results with the experiments, it is found that the appropriate deformation potential and piezoelectric constant values for InP are 6.5 eV and 0.01, respectively. A new electron mobility and carrier concentration relationship, which can be used to determine the compensation ratio of high-purity n-type InP, is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337962
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  • 5
    Electronic Resource
    Electronic Resource
    Effective mass and ground state of AlAs quantum wells studied by magnetoresistance measurements (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 296-299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport properties of electrons confined in AlAs quantum wells were studied using low temperature magnetoresistance measurement. The structure used is quantum wells consisting of AlAs channel layers sandwiched by Si-doped Al0.45Ga0.55As barrier layers. This structure enables us to confine electrons in the X valleys of AlAs. The electron confinement in the AlAs quantum wells were confirmed by a mobility enhancement at low temperatures. Magnetoresistance measurements showed clear Shubnikov–de Haas oscillations for the magnetic field parallel to the growth direction. A large effective mass of (0.55±0.05) m0, which is close to (square root of)mtml (mt:transverse effective mass, ml:longitudinal effective mass), was obtained from the temperature dependence of the oscillations. This indicates that the ground state is Xx, Xy, even though Xz was expected to be the ground state due to its large effective mass parallel to the growth direction. This changeover of AlAs X valley states can most likely be attributed to a strain-induced energy shift caused by the small lattice mismatch between GaAs and AlAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350704
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  • 6
    Electronic Resource
    Electronic Resource
    Small mesa structure in split-gate wires fabricated by scanning tunneling microscope for observing Coulomb blockade effects (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2600-2602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fabrication and transport properties of small mesa/split-gate hybrid structures are described. In order to make small semiconductor mesas acting as an "impurity'' at a desired wire surface position, we used a scanning tunneling microscope/scanning electron microscope combined system operated in vacuum. The fabrication method is simple electrical evaporation with a tungsten tip. In a split-gate quantum wire having a small mesa (70 nm diameter and 15 nm tall) in the center, clear Coulomb blockades and staircases corresponding to the size of the mesa were observed at 0.3 K. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112580
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  • 7
    Electronic Resource
    Electronic Resource
    Narrow two-dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1518-1520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Narrow two-dimensional electron gas (2DEG) channels have been fabricated for the first time on GaAs/Al0.3Ga0.7As sidewall interfaces by selective growth using metalorganic chemical vapor deposition (MOCVD). The 4-μm-wide 2DEG channels are formed on the {111}A facets by controlling the facet formation in the selective growth layers only through MOCVD growth conditions. The angular dependence of Shubnikov–de Haas oscillations has confirmed the existence of 2DEG on the {111}A facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98621
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  • 8
    Electronic Resource
    Electronic Resource
    Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1022-1024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The mobility for each subband is then determined by fitting the field dependence of the amplitudes with conventional theory. A large subband mobility difference up to 20:1 is found. This is mainly due to strong screening. Furthermore, a partial conductivity for each subband is calculated and the importance of the shallower subbands in total current transport is clarified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103553
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  • 9
    Electronic Resource
    Electronic Resource
    Saturation of phase coherence length in GaAs/AlGaAs on-facet quantum wires (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2123-2125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase coherence length Lφ of on-facet quantum wires is determined at temperatures down to 50 mK by three methods: magnetoresistance, conductance fluctuation amplitude, and the conductance fluctuation correlation field. It is found that Lφ saturates below about 0.4 K. This saturation is identified as due to spin-orbit interaction, which has no temperature dependence. This result is supported by positive magnetoresistance under a weak magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102990
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  • 10
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    Magnetic Domain Dependent Quantum Transport through a Ferromagnetic Dot Embedded in a Semiconductor Quantum Wire (1998)
    American Physical Society
    Details
    Publication Date: 1998-12-14
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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