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  • 1
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    Effect of Ba substitution on the multiferroic properties of BiFeO3 films on glass substrates (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-03-31
    Description: Effect of Ba substitution on the multiferroic properties of non-epitaxially grown polycrystalline Bi 1−x Ba x FeO 3 (BBFO) films on refined Pt(111) electrode buffered glass substrates is studied. The structural analysis shows that a pure perovskite phase is present for BBFO films (x = 0.05-0.15), and (110) preferred orientation is developed for films with high x = 0.15. The grain size and surface roughness are reduced with increasing x. All studied BBFO films show desired ferroelectric and ferromagnetic properties. The good ferroelectric properties with the remanent polarization (2P r ) of 36-70  μ C/cm 2 and electrical coercive field (E c ) of 318-570 kV/cm are attained. On the other hand, the substitution of Ba 2+ for Bi 3+ in the A site of the BFO crystal structure can effectively enhance the ferromagnetic properties with magnetization (M s ) of 9.4-13.9 emu/cm 3 and coercivity (H c ) of 1216-1380 Oe. The ferromagnetic and ferroelectric properties and leakage behavior as functions of Ba content x are discussed.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Chemical dissection of the cell cycle: probes for cell biology and anti-cancer drug development (2014)
    Springer Nature
    Details
    Publication Date: 2014-10-17
    Description: Chemical dissection of the cell cycle: probes for cell biology and anti-cancer drug development Cell Death and Disease 5, e1462 (October 2014). doi:10.1038/cddis.2014.420 Authors: S Senese, Y C Lo, D Huang, T A Zangle, A A Gholkar, L Robert, B Homet, A Ribas, M K Summers, M A Teitell, R Damoiseaux & J Z Torres
    Electronic ISSN: 2041-4889
    Topics: Biology , Medicine
    Published by Springer Nature
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  • 3
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    Helical assembly in the MyD88-IRAK4-IRAK2 complex in TLR/IL-1R signalling (2010)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2010-05-21
    Description: MyD88, IRAK4 and IRAK2 are critical signalling mediators of the TLR/IL1-R superfamily. Here we report the crystal structure of the MyD88-IRAK4-IRAK2 death domain (DD) complex, which surprisingly reveals a left-handed helical oligomer that consists of 6 MyD88, 4 IRAK4 and 4 IRAK2 DDs. Assembly of this helical signalling tower is hierarchical, in which MyD88 recruits IRAK4 and the MyD88-IRAK4 complex recruits the IRAK4 substrates IRAK2 or the related IRAK1. Formation of these Myddosome complexes brings the kinase domains of IRAKs into proximity for phosphorylation and activation. Composite binding sites are required for recruitment of the individual DDs in the complex, which are confirmed by mutagenesis and previously identified signalling mutations. Specificities in Myddosome formation are dictated by both molecular complementarity and correspondence of surface electrostatics. The MyD88-IRAK4-IRAK2 complex provides a template for Toll signalling in Drosophila and an elegant mechanism for versatile assembly and regulation of DD complexes in signal transduction.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2888693/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2888693/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lin, Su-Chang -- Lo, Yu-Chih -- Wu, Hao -- P30 EB009998/EB/NIBIB NIH HHS/ -- R01 AI050872/AI/NIAID NIH HHS/ -- R01 AI050872-09/AI/NIAID NIH HHS/ -- England -- Nature. 2010 Jun 17;465(7300):885-90. doi: 10.1038/nature09121. Epub 2010 May 19.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Biochemistry, Weill Cornell Medical College, New York, New York 10021, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/20485341" target="_blank"〉PubMed〈/a〉
    Keywords: Humans ; *Interleukin-1 Receptor-Associated Kinases/chemistry/metabolism ; *Models, Molecular ; *Myeloid Differentiation Factor 88/chemistry/metabolism ; Protein Structure, Tertiary ; Receptors, Interleukin-1/metabolism/*physiology ; *Signal Transduction ; Toll-Like Receptors/metabolism/*physiology
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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  • 4
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    Crystal structure of inhibitor of kappaB kinase beta (2011)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2011-03-23
    Description: Inhibitor of kappaB (IkappaB) kinase (IKK) phosphorylates IkappaB proteins, leading to their degradation and the liberation of nuclear factor kappaB for gene transcription. Here we report the crystal structure of IKKbeta in complex with an inhibitor, at a resolution of 3.6 A. The structure reveals a trimodular architecture comprising the kinase domain, a ubiquitin-like domain (ULD) and an elongated, alpha-helical scaffold/dimerization domain (SDD). Unexpectedly, the predicted leucine zipper and helix-loop-helix motifs do not form these structures but are part of the SDD. The ULD and SDD mediate a critical interaction with IkappaBalpha that restricts substrate specificity, and the ULD is also required for catalytic activity. The SDD mediates IKKbeta dimerization, but dimerization per se is not important for maintaining IKKbeta activity and instead is required for IKKbeta activation. Other IKK family members, IKKalpha, TBK1 and IKK-i, may have a similar trimodular architecture and function.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3081413/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3081413/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Xu, Guozhou -- Lo, Yu-Chih -- Li, Qiubai -- Napolitano, Gennaro -- Wu, Xuefeng -- Jiang, Xuliang -- Dreano, Michel -- Karin, Michael -- Wu, Hao -- R01 AI050872/AI/NIAID NIH HHS/ -- R01 AI050872-10/AI/NIAID NIH HHS/ -- R01 AI079260/AI/NIAID NIH HHS/ -- England -- Nature. 2011 Apr 21;472(7343):325-30. doi: 10.1038/nature09853. Epub 2011 Mar 20.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Biochemistry, Weill Cornell Medical College, New York, New York 10021, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21423167" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Motifs ; Animals ; Biocatalysis ; Crystallography, X-Ray ; Enzyme Activation ; Humans ; I-kappa B Kinase/*antagonists & inhibitors/*chemistry/metabolism ; Models, Molecular ; Protein Binding ; Protein Multimerization ; Protein Structure, Tertiary ; Substrate Specificity ; Ubiquitin/chemistry ; Xenopus laevis
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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  • 5
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    Electrical wind force-driven and dislocation-templated amorphization in phase-change nanowires (2012)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2012-06-23
    Description: Phase-change materials undergo rapid and reversible crystalline-to-amorphous structural transformation and are being used for nonvolatile memory devices. However, the transformation mechanism remains poorly understood. We have studied the effect of electrical pulses on the crystalline-to-amorphous phase change in a single-crystalline Ge(2)Sb(2)Te(5) (GST) nanowire memory device by in situ transmission electron microscopy. We show that electrical pulses produce dislocations in crystalline GST, which become mobile and glide in the direction of hole-carrier motion. The continuous increase in the density of dislocations moving unidirectionally in the material leads to dislocation jamming, which eventually induces the crystalline-to-amorphous phase change with a sharp interface spanning the entire nanowire cross section. The dislocation-templated amorphization explains the large on/off resistance ratio of the device.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Nam, Sung-Wook -- Chung, Hee-Suk -- Lo, Yu Chieh -- Qi, Liang -- Li, Ju -- Lu, Ye -- Johnson, A T Charlie -- Jung, Yeonwoong -- Nukala, Pavan -- Agarwal, Ritesh -- New York, N.Y. -- Science. 2012 Jun 22;336(6088):1561-6. doi: 10.1126/science.1220119.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/22723418" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 6
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    GDF15 mediates the effects of metformin on body weight and energy balance (2019)
    Springer Nature
    In: Nature
    Details
    Publication Date: 2019
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Springer Nature
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  • 7
    Electronic Resource
    Electronic Resource
    Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2361-2367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain and quantum-size effects in pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures (SQWHs) are examined using low-temperature photoluminescence techniques. Strain effects in InxGa1−xAs epitaxial layers are first described, then photoluminescence data for a series of MBE-grown pseudomorphic SQWHs are presented and discussed. Each SQWH consists of an unintentionally doped, highly strained (ε∼2%) In0.28Ga0.72As quantum well sandwiched between GaAs confining layers. The structures were grown consecutively under identical conditions, with quantum-well thicknesses ranging from 17 to 430 A(ring). The thinner quantum-well structures exhibit luminescence characteristics indicative of high-quality material (photoluminescence half width ∼6 meV for Lz ∼17 A(ring)), whereas significant broadening and eventual quenching of the photoluminescence peak is observed as alloy layer thicknesses approach and exceed the critical value. Quantum-well luminescence from the thinner (Lz ≤38 A(ring)) SQWHs is dominated by a single, sharp feature which we attribute to n=1 electron-to-heavy hole confined-carrier transitions. An additional shallow (∼20 meV) feature, perhaps impurity related, is present in the photoluminescence spectra of some of the thicker quantum wells, and peak emission intensities are examined as a function of excitation intensity for the various transitions. Finally, the observed dependence of the transition energies upon quantum-well thickness is compared to predictions from an effective-mass SQWH model which incorporates strain effects. Reasonable agreement is obtained for SQWHs with Lz ≤100 A(ring), the expected critical layer thickness for these samples. This work represents the first optical study of pseudomorphic single wells, and our results should be useful in the design of strained-layer quantum-well lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337146
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  • 8
    Electronic Resource
    Electronic Resource
    Stimulated emission in ultrathin (20 A(ring)) AlxGa1−xAs-GaAs single quantum well heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1853-1855 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spontaneous and stimulated emission spectra from a series of AlxGa1−xAs-GaAs single quantum well heterostructures are demonstrated for well widths as thin as 20 A(ring). These undoped samples, grown by molecular beam epitaxy, are the thinnest single quantum wells ever reported to support stimulated emission. Laser thresholds are generally quite low (1.2 kW/cm2) despite the fact that the single well is undoped and of dimensions which were previously thought to be too small to effectively collect excess carriers (Lz(very-much-less-than)scattering path length). A simple model based on the spatial extent of the wave function, rather than the well width, is proposed to explain the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99619
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  • 9
    Electronic Resource
    Electronic Resource
    Phonon-assisted stimulated emission in thin (〈55 A(ring)) AlGaAs-GaAs-AlGaAs single quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2266-2268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Since the initial report of phonon-assisted stimulated emission in AlGaAs-GaAs quantum wells, several laboratories have performed similar experiments which have produced a wide range of experimental data and interpretations. We present photopumped laser data (77 K) from three different AlGaAs-GaAs-AlGaAs single quantum well heterostructures grown by molecular beam epitaxy. Closely spaced end-to-end laser modes are observed one phonon energy (≈36 meV) below the n=1' electron to light hole confined-particle state which we attribute to phonon-assisted stimulated emission. Also, the data are inconsistent with impurity related luminescence or optical absorption losses which have been suggested as alternative explanations. These results are important because these are the thinnest quantum wells to exhibit phonon-assisted stimulated emission and the first independent observation and confirmation of this important phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100249
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  • 10
    Electronic Resource
    Electronic Resource
    Time-resolved phonon-assisted stimulated emission in AlGaAs-GaAs quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 351-353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence of phonon-assisted stimulated emission is reported for the first time. The temporal characteristics of the phonon-assisted stimulated emission are distinct from the stimulated emission from the quantum states. The phonon-assisted recombination is always delayed in time with respect to the confined particle transitions and has a larger full width at half maximum than the confined particle transitions. The dynamics of stimulated phonon emission along with the smaller transition probability for the phonon-assisted process may account for the distinct temporal characteristics. Data are presented on the emission intensity versus wavelength versus time from which the dependence of the delay on excitation intensity is extracted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105592
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