ISSN:
1432-0630
Keywords:
61.80.Mk
;
79.20.Rf
;
79.20.Nc
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The effect of 2.0 MeV Cu+ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 〈100〉 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×1014 ions/cm2, the defect concentration increases leading to the formation of an amorphous layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324080
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