Publication Date:
2015-08-08
Description:
Highly (100)-oriented 0.38Bi(Ni 1/2 Hf 1/2 )O 3 -0.62PbTiO 3 relaxor-ferroelectric films were fabricated on Pt(111)/Ti/SiO 2 /Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity , a low dissipation factor (tan δ 〈 5%), and strong relaxor-like behavior (γ = 0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 ± 2.3 J/cm 3 was achieved for films with (100) preferential orientation, which is much higher than the value ~33.5 ± 1.7 J/cm 3 obtained from films with random orientation. Furthermore, the PbO-seeded films are more capable of providing larger piezoelectric response (~113 ± 10 pm/V) compared to the films without seeds (~85 ± 8 pm/V). These excellent features indicate that the highly (100)-oriented 0.38Bi(Ni 1/2 Hf 1/2 )O 3 -0.62PbTiO 3 films could be promising candidates for applications in high-energy storage capacitors, high-performance MEMS devices, and particularly for potential applications in the next-generation integrated multifunctional piezoelectric energy harvesting and storage system.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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