Publication Date:
2017-09-07
Description:
Tunneling anisotropic magnetoresistance driven by magnetic phase transition Nature Communications, Published online: 6 September 2017; doi:10.1038/s41467-017-00290-4 Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α′-FeRh magnetic electrode.
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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