ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract SnO2 thin films were prepared using SnCl4 and O2 as precursors by means of the plasma enhanced chemical vapor deposition method (PECVD), and were modified with silver (Ag) by a soaking technique to form a SnO2-Ag-SnO2 element. The characteristics of this element were found to depend on the operating temperature and H2S concentration. This element proved to be highly sensitive and selective to H2S at room temperature (20 °C). Furthermore, its response speed was fairly high at this temperature. The gas sensing mechanism of the SnO2-Ag-SnO2 element to H2S is also discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008962323104
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