Publication Date:
2014-12-20
Description:
Carbon-doped Ge 2 Sb 2 Te 5 (GSTC) film has been experimentally studied as a thermal stable material for high temperature applications. The 10-yr data retention temperature is remarkably increased through C doping. Furthermore, GSTC films have better interface properties after annealing at 410 °C for 30 min. The density variation of GSTC film is significantly improved, which is very important to device reliability. X-ray photoelectron spectroscopy results reveal that the thermal stability enhancement of GSTC film attributes to the forming of C-Ge, C-Sb, and C-Te bonds. The perfect thermal stability makes GSTC materials a good candidate in the actual production of phase-change memory.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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