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  • 1
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3934-3937 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct growth of GaAs by molecular-beam epitaxy on nominally (100)-oriented silicon with a buried implanted oxide is demonstrated. Nomarski interference contrast optical microscopy, transmission electron microscopy, and Rutherford backscattering techniques have been employed to characterize these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins and threading dislocations are the predominant defects in these layers. Furthermore, we report the absence of antiphase domain boundaries within the GaAs hillocks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341349
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  • 2
    Electronic Resource
    Electronic Resource
    Degradation of rapid thermal oxides due to the presence of nitrogen in the oxidation ambient (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 980-982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin rapid thermal oxides have been formed in oxygen with varying levels of nitrogen incorporated into the oxidation ambient. Metal-oxide-semiconductor capacitors were subsequently fabricated and tested. It was observed that the interface trap density and the frequency of low field breakdowns increased with increasing nitrogen concentration in the oxidation ambient. No improvement in the interface state generation rate due to nitrogen incorporation in the oxidation ambient was observed in this study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110925
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of processing conditions on negative bias temperature instability in metal-oxide-semiconductor structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1344-1346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation from electron beam metallization has been found to result in damage to metal-oxide-semiconductor structures, which, when not properly annealed out, can lead to severe negative bias temperature instability (NBTI), even at room temperature. Similarly, rapid thermal annealing (RTA) after oxidation can result in significant room-temperature instability. The post-metal-annealing behavior of this RTA-induced instability depends on the high-temperature annealing ambient (Ar vs O2). Processing in O2 can also lead to significant NBTI; however, following such steps by an Ar anneal at the same temperature can negate the effect, and in some cases, lead to an overall reduction in NBTI. An electrical current flows during the stressing measurement and can be correlated with the development of oxide positive charge. This finding supports a model for charge buildup during NBT stressing in which holes from the Si substrate become trapped in intrinsic hole traps located within the oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99154
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  • 4
    Electronic Resource
    Electronic Resource
    Bipolar transistor with ion implanted, rapid thermal annealed base and semi-insulating polycrystalline silicon emitter (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2831-2838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The purpose of this work was to investigate the use of ion implantation combined with rapid thermal annealing for the base and semi-insulating polycrystalline silicon (SIPOS) for the emitter of a bipolar transistor. The microstructure of the SIPOS/Si interface after rapid thermal annealing conditions and its influence on the electrical performance of the device was studied. The SIPOS/Si interface was found to be more stable than the polysilicon/Si interface after similar processing conditions, and a thin interfacial oxide layer was observed to inhibit epitaxial alignment at the interface. Lower emitter series resistances were obtained for devices where epitaxial alignment occurred at the interface, however, no quantitative correlation was observed between the microstructure of the interface and the current gain of the transistor. Bipolar transistors with enhanced current gain/base resistance ratios were fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340986
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  • 5
    Electronic Resource
    Electronic Resource
    Rapid thermal and pulsed laser annealing of boron fluoride-implanted silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2709-2716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristics of rapid thermal and pulsed laser annealing have been investigated in boron fluoride- (BF+2 and BF+3) -implanted silicon using cross-section and plan-view electron microscopy. The amorphous layers recrystallize by the solid-phase-epitaxial growth process, while the dislocation loops below the amorphous layers coarsen and evolve into a network of dislocations. The dislocations in this band getter fluorine and fluorine bubbles associated with dislocations are frequently observed. The secondary-ion mass spectrometry techniques were used to study concomitant boron and fluorine redistributions. The as-implanted Gaussian boron profile broadens as a function of time and temperature of annealing. However, the fluorine concentration peak is observed to be associated with dislocation band, and the peak grows with increasing time and temperature of annealing. The electrical properties were investigated using van der Pauw measurements. The electrical activation of better than 90% and good Hall mobility were observed in specimens with less than 500-A(ring) dopant-profile broadening. In pulsed laser-annealed specimens, the boron profile broadens both toward the surface and into the deeper regions of the crystal. However, the fluorine concentration profile exhibits a decrease in peak concentration with only a limited broadening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335411
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  • 6
    Electronic Resource
    Electronic Resource
    Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3388-3390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ boron-doped polycrystalline Si1−xGex (x〉0.4) films have been formed on the thermally grown oxides in a rapid thermal chemical vapor deposition processor using SiH4-GeH4-B2H6-H2 gas system. Our results showed that in situ boron-doped Si1−xGex films can be directly deposited on the oxide surface, in contrast to the rapid thermal deposition of undoped silicon-germanium (Si1−xGex) films on oxides which is a partially selective process and requires a thin silicon film pre-deposition to form a continuous film. For the in situ boron-doped Si1−xGex films, we observed that with the increase of the germane percentage in the gas source, the Ge content and the deposition rate of the film are increased, while its resistivity is decreased down to 0.66 mΩ cm for a Ge content of 73%. Capacitance-voltage characteristics of p-type metal-oxide-semiconductor capacitors with p+-Si1−xGex gates showed negligible polydepletion effect for a 75 Å gate oxide, indicating that a high doping level of boron at the poly-Si1−xGex/oxide interface was achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120344
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  • 7
    Electronic Resource
    Electronic Resource
    On the mobility of n-channel metal–oxide–semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 73-75 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The factors affecting the channel mobility of metal–oxide–semiconductor transistors fabricated using as-deposited rapid thermal chemical vapor deposition (RTCVD) of silicon dioxide are investigated and compared to thermal silicon dioxide at various temperatures. The results indicate that the observed differences in the mobility values of thermal and rapid thermal chemical vapor deposed oxides at channel concentrations where Coulombic scattering is important is due to increased oxide trapping in the RTCVD films. It was also observed that the rapid thermal chemical vapor deposited oxides exhibited slightly larger mobility degradation rates at high fields when compared to thermal oxides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114149
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature extended defect removal following low-energy ion implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 228-230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, residual defects resulting from Ge+ preamorphization of Si substrates prior to low-energy (6 keV) BF+2 implantation are compared using cross-section transmission electron microscopy. Complete defect annihilation including end of range damage dislocation loops has been accomplished for samples preamorphized by 27 keV Ge+ implants at rapid thermal anneals as low as 950 °C. Resulting junction depths are less than 70 nm, at a background concentration of 1×1017 cm−3. Low-energy BF+2 implantation was also found to prevent nucleation of the F+-induced surface damage that appears following annealing of higher energy BF+2 implants into crystalline and preamorphized substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100584
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  • 9
    Electronic Resource
    Electronic Resource
    Very shallow p+-n junction formation by low-energy BF+2 ion implantation into crystalline and germanium preamorphized silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 963-965 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 A(ring)) junctions in crystalline and Ge+ preamorphized Si. Low-temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge+ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end-of-range damage, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99242
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of ultrashallow p+-n junctions by low-energy boron implantation using a modified ion implanter (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1741-1743 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A conventional ion implanter (Varian Extrion Series 400 implanter) has been modified for the purpose of implanting at ultralow energies (0.5–5 keV). A 35 keV ion beam is decelerated to the desired energy just prior to impacting the substrate, thereby minimizing beam expansion and beam current reduction. The deceleration lens was designed to minimize the variation in energies and incident angles of implanted ions at the target. Computer simulation of the deceleration system indicated that less than a 2° variation in incident angles and a 50 eV variation in ion energies could be expected for 1 keV 11B implantation. Secondary-ion mass spectrometry revealed essentially identical as-implanted boron profiles for 1.35 keV 11B implanted with the modified system and 6 keV BF2 implanted without the modification, indicating successful deceleration. The modified implanter was used to form ultrashallow p+-n junctions via 1 keV 11B implantation coupled with rapid thermal annealing. Results indicate that ultralow-energy B implantation can be used to create junction depths as shallow as 50 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100470
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